Metal oxysilicate diffusion barriers for damascene metallization with low RC delays and methods for forming the same

Patent metadata

Field	Value
Publication number	US-9728502-B2
Application number	US-201514920867-A
Country	US
Kind code	B2
Filing date	Oct 22, 2015
Priority date	Nov 10, 2014
Publication date	Aug 8, 2017
Grant date	Aug 8, 2017

Abstract

A method is disclosed to form a metal-oxysilicate diffusion barrier for a damascene metallization. A trench is formed in an Inter Layer Dielectric (ILD) material. An oxysilicate formation-enhancement layer comprising silicon, carbon, oxygen, a constituent component of the ILD, or a combination thereof, is formed in the trench. A barrier seed layer is formed on the oxysilicate formation-enhancement layer comprising an elemental metal selected from a first group of elemental metals in combination with an elemental metal selected from a second group of elemental metals. An elemental metal in the second group is immiscible in copper or an alloy thereof, has a diffusion constant greater than a self-diffusion of copper or an alloy thereof; does not reducing silicon-oxygen bonds during oxysilicate formation; and promotes adhesion of copper or an alloy of copper to the metal-oxysilicate barrier diffusion layer. The structure is then annealed to form a metal-oxysilicate diffusion barrier.

First claim

What is claimed is:

1. A method to form a metal-oxysilicate diffusion barrier, the method comprising:
forming at least one trench structure in an Inter Layer Dielectric (ILD) material, the at least one trench structure comprising at least one sidewall surface and a bottom surface;
forming an oxysilicate formation-enhancement layer on the at least one sidewall surface and the bottom surface of the at least one trench structure, the oxysilicate formation-enhancement layer comprising silicon;
forming a barrier seed layer on the oxysilicate formation-enhancement layer, the barrier seed layer comprising an elemental metal selected from a first group of elemental metals or one or more alloys formed from an elemental metal selected from the first group of elemental metals, and the first group of elemental metals comprising manganese, chromium and vanadium; and
annealing the at least one trench structure, the oxysilicate formation-enhancement layer and the barrier seed layer to form a metal-oxysilicate diffusion barrier layer,
wherein forming a barrier seed layer on the oxysilicate formation-enhancement layer comprises:
forming a first barrier seed layer comprising a form of M1 x M2 y , in which x+y=1, and elemental metals M1 and M2 are selected from the group comprising manganese and vanadium; and
forming a second barrier seed layer comprising a form of Cu x M3 y , in which x+y=1, and M3 comprises chromium, wherein the second barrier seed layer includes at least a trace of chromium.

2. The method according to claim 1 , wherein the oxysilicate formation-enhancement layer comprises silicon dioxide.

3. The method according to claim 2 , wherein an elemental metal in the first group of elemental metals is immiscible in copper or an alloy of copper, has a diffusion constant that is greater than a self-diffusion of copper or an alloy of copper; does not reducing silicon-oxygen bonds during oxysilicate formation; and promotes adhesion of copper or an alloy of copper to the metal-oxysilicate barrier diffusion layer.

4. A method to form a self-formed diffusion barrier, the method comprising:
forming at least one trench structure in an Inter Layer Dielectric (ILD) material, the at least one trench structure comprising at least one sidewall surface and a bottom surface;
forming a self-formed diffusion barrier (SFB) on the at least one sidewall and the bottom surface of the at least one trench by:
forming an oxysilicate formation-enhancement layer on the at least one sidewall surface and the bottom surface of the at least one trench structure, the oxysilicate formation-enhancement layer comprises silicon;
forming a barrier seed layer on the oxysilicate formation-enhancement layer, the barrier seed layer comprising an elemental metal selected from a first group of elemental metals or one or more alloys formed from an elemental metal selected from the first group of elemental metals, and the first group of elemental metals comprising manganese, chromium and vanadium; and
annealing the at least one trench structure, the oxysilicate formation-enhancement layer and the barrier seed layer to form the SFB;
forming a seed layer of a conductive material on the SFB; and
forming a layer of the conductive material on the seed layer of the conductive material by electrodeposition,

wherein forming a barrier seed layer on the oxysilicate formation-enhancement layer comprises:
forming a first barrier seed layer comprising a form of M1 x M2 y , in which x+y=1, and elemental metals M1 and M2 are selected from the group comprising manganese and vanadium; and
forming a second barrier seed layer comprising a form of Cu x M3 y , in which x+y=1, and M3 comprises chromium, wherein the second barrier seed layer includes at least a trace of chromium.

5. The method according to claim 4 , wherein an elemental metal in the second group of elemental metals is immiscible in copper or an alloy of copper, has a diffusion constant that is greater than a self-diffusion of copper or an alloy of copper; does not reducing silicon-oxygen bonds during oxysilicate formation; and promotes adhesion of copper or an alloy of copper to the metal-oxysilicate barrier diffusion layer, and
wherein the oxysilicate formation-enhancement layer comprises silicon dioxide.

6. A method to form a metal-oxysilicate diffusion barrier, the method comprising:
forming at least one trench structure in an Inter Layer Dielectric (ILD) material, the at least one trench structure comprising at least one sidewall surface and a bottom surface;
forming an oxysilicate formation-enhancement layer on the at least one sidewall surface and the bottom surface of the at least one trench structure, the oxysilicate formation-enhancement layer comprises silicon;
forming a barrier seed layer on the oxysilicate formation-enhancement layer, the barrier seed layer comprising an elemental metal selected from a first group of elemental metals or one or more alloys formed from an elemental metal selected from the first group of elemental metals, an elemental metal in the first group of elemental metals being immiscible in copper or an alloy of copper, having a diffusion constant that is greater than a self-diffusion of copper or an alloy of copper, not reducing silicon-oxygen bonds during oxysilicate formation, and promoting adhesion of copper or an alloy of copper to the metal-oxysilicate barrier diffusion layer, and the first group of elemental metals comprising manganese, chromium and vanadium; and
annealing the at least one trench structure, the oxysilicate formation-enhancement layer and the barrier seed layer to form a metal-oxysilicate diffusion barrier layer,
wherein forming a barrier seed layer on the oxysilicate formation-enhancement layer comprises:
forming a first barrier seed layer comprising a form of M1 x M2 y , in which x+y=1, and elemental metals M1 and M2 are selected from the group comprising manganese and vanadium; and
forming a second barrier seed layer comprising a form of Cu x M3 y , in which x+y=1, and M3 comprises chromium, wherein the second barrier seed layer includes at least a trace of chromium.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Hegde Ganesh
• Rodder Mark
• Sengupta Rwik
• Bowen Chris

Classifications

• H10W20/0552

  by diffusing metallic dopants to react with dielectrics · CPC title

• H10W20/0425

  comprising multiple stacked seed or nucleation layers · CPC title

• H10W20/076

  in via holes or trenches · CPC title

• H10W20/047

  by introducing additional elements therein · CPC title

• H10W20/043

  for electroplating · CPC title