Fabrication of trench transistor with esd in trench
US-2026006880-A1 · Jan 1, 2026 · US
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Lui Sik patents
Lui Sik is listed as an inventor on 93 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Lui Sik |
| Total patents | 93 |
| First publication | Jan 13, 2015 |
| Latest publication | Jan 1, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
High density shield gate transistor structure and method of making
US-12295166-B2 · May 6, 2025 · US
Programmable gate design for multiple gate transistor
US-2025081517-A1 · Mar 6, 2025 · US
Low threshold high density trench mosfet
US-2025072045-A1 · Feb 27, 2025 · US
Recess poly esd diode for power mosfet
US-2024421147-A1 · Dec 19, 2024 · US
Bottom source trench MOSFET with shield electrode
US-11869967-B2 · Jan 9, 2024 · US
High Density Shield Gate Transistor Structure and Method of Making
US-2023238440-A1 · Jul 27, 2023 · US
Bottom source trench mosfet with shield electrode
US-2023049581-A1 · Feb 16, 2023 · US
Bidirectional switch having back to back field effect transistors
US-11031390-B2 · Jun 8, 2021 · US
Process method and structure for high voltage mosfets
US-2020303517-A1 · Sep 24, 2020 · US
Recent patents
Latest publications not already listed above.
Source ballasting for p-channel trench MOSFET
US-10714580-B2 · Jul 14, 2020 · US
Process method and structure for high voltage MOSFETs
US-10686056-B2 · Jun 16, 2020 · US
Self-aligned contact for trench power MOSFET
US-10644118-B2 · May 5, 2020 · US
Method for fabricating a folded channel trench MOSFET
US-10553714-B2 · Feb 4, 2020 · US
Bidirectional switch having back to back field effect transistors
US-2019393218-A1 · Dec 26, 2019 · US
Bidirectional switch having back to back field effect transistors
US-10446545-B2 · Oct 15, 2019 · US
Device structure having inter-digitated back to back MOSFETs
US-10388781-B2 · Aug 20, 2019 · US
Source ballasting for p-channel trench mosfet
US-2019245051-A1 · Aug 8, 2019 · US
Compact source ballast trench MOSFET and method of manufacturing
US-10325908-B2 · Jun 18, 2019 · US
Folded channel trench mosfet
US-2019172945-A1 · Jun 6, 2019 · US
Method of manufacturing LV/MV super junction trench power MOSFETs
US-10263070-B2 · Apr 16, 2019 · US
Forming switch circuit with controllable phase node ringing
US-10256236-B2 · Apr 9, 2019 · US
Scalable SGT structure with improved FOM
US-10211333-B2 · Feb 19, 2019 · US
Folded channel trench MOSFET
US-10199492-B2 · Feb 5, 2019 · US
Method of manufacturing lv/mv super junction trench power mosfets
US-2018358433-A1 · Dec 13, 2018 · US
Forming switch circuit with controllable phase node ringing
US-2018342506-A1 · Nov 29, 2018 · US
Compact source ballast trench mosfet and method of manufacturing
US-2018315749-A1 · Nov 1, 2018 · US
Scalable sgt structure with improved fom
US-2018315846-A1 · Nov 1, 2018 · US
Switch circuit with controllable phase node ringing
US-10103140-B2 · Oct 16, 2018 · US
Variable snubber for MOSFET application
US-10062685-B2 · Aug 28, 2018 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Alpha & Omega Semiconductor | 70 |
| Alpha & Omega Semiconductor Cayman Ltd | 8 |
| Alpha & Omega Semiconductor Int Lp | 8 |
| Lui Sik | 8 |
| Alpha & Omega Semiconductor | 5 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D30/668 | 79 |
| H10D30/0297 | 69 |
| H10D64/117 | 54 |
| H10D62/393 | 53 |
| H01L29/7813 | 53 |