Ordered alloy magnetic tunnel junction with simplified seed structure
US-12575330-B2 · Mar 10, 2026 · US
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Hu Guohan patents
Hu Guohan is listed as an inventor on 126 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Hu Guohan |
| Total patents | 126 |
| First publication | Feb 3, 2015 |
| Latest publication | Mar 10, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Textured cobalt aluminum/magnesium-aluminum-oxide pedestal for memory devices
US-12464957-B2 · Nov 4, 2025 · US
Free layer in magnetic tunnel junction of a mram device
US-2025338780-A1 · Oct 30, 2025 · US
Reactive serial resistance reduction for magnetoresistive random-access memory devices
US-12364164-B2 · Jul 15, 2025 · US
Ordered alloy magnetic tunnel junction device
US-2025107453-A1 · Mar 27, 2025 · US
Free layer in magnetoresistive random-access memory
US-2025040444-A1 · Jan 30, 2025 · US
Magnetic exchange coupled MTJ free layer having low switching current and high data retention
US-12190925-B2 · Jan 7, 2025 · US
Textured cobalt aluminum/magnesium-aluminum-oxide pedestal for memory devices
US-2024357942-A1 · Oct 24, 2024 · US
Mtj pillar having temperature-independent delta
US-2024349620-A1 · Oct 17, 2024 · US
Magnetic tunnel junction free layer of multiple materials
US-2024334837-A1 · Oct 3, 2024 · US
Recent patents
Latest publications not already listed above.
Low RA narrow base modified double magnetic tunnel junction structure
US-12063868-B2 · Aug 13, 2024 · US
Ordered alloy magnetic tunnel junction with simplified seed structure
US-2024244982-A1 · Jul 18, 2024 · US
Reactive serial resistance reduction for magnetoresistive random-access memory devices
US-2024196755-A1 · Jun 13, 2024 · US
MRAM structure with enhanced magnetics using seed engineering
US-11972785-B2 · Apr 30, 2024 · US
Mram structure with enhanced magnetics using seed engineering
US-2023154513-A1 · May 18, 2023 · US
Multilayered magnetic free layer structure containing an ordered magnetic alloy first magnetic free layer for spin-transfer torque (STT) MRAM
US-11557628-B2 · Jan 17, 2023 · US
In-situ annealing and etch back steps to improve exchange stiffness in cobalt iron boride based perpendicular magnetic anisotropy free layers
US-11527707-B2 · Dec 13, 2022 · US
Amorphous spin diffusion layer for modified double magnetic tunnel junction structure
US-11501810-B2 · Nov 15, 2022 · US
Amorphous spin diffusion layer for modified double magnetic tunnel junction structure
US-2022301612-A1 · Sep 22, 2022 · US
Low ra narrow base modified double magnetic tunnel junction structure
US-2022302368-A1 · Sep 22, 2022 · US
Planar solenoid inductors with antiferromagnetic pinned cores
US-11342115-B2 · May 24, 2022 · US
Multilayered magnetic free layer structure for spin-transfer torque (stt) mram
US-2022123049-A1 · Apr 21, 2022 · US
STT MRAM matertails with heavy metal insertion
US-11302863-B2 · Apr 12, 2022 · US
Multilayered magnetic free layer structure for spin-transfer torque (STT) MRAM
US-11264559-B2 · Mar 1, 2022 · US
Method for forming a planar solenoid inductor
US-11222746-B2 · Jan 11, 2022 · US
Thin reference layer for STT MRAM
US-11223010-B2 · Jan 11, 2022 · US
Stt mram materials with heavy metal insertion
US-2021257540-A1 · Aug 19, 2021 · US
Multilayered magnetic free layer structure containing an ordered magnetic alloy first magnetic free layer for spin-transfer torque (stt) mram
US-2021118949-A1 · Apr 22, 2021 · US
Multilayered magnetic free layer structure containing an ordered magnetic alloy first magnetic free layer for spin-transfer torque (STT) MRAM
US-10916581-B2 · Feb 9, 2021 · US
Low magnetic moment materials for spin transfer torque magnetoresistive random access memory devices
US-10833253-B2 · Nov 10, 2020 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| IBM | 126 |
| Samsung Electronics Co Ltd | 22 |
| Ind Tech Res Inst | 6 |
| Industrial Tech Research | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.