Ordered alloy magnetic tunnel junction with simplified seed structure

Patent metadata

Field	Value
Publication number	US-12575330-B2
Application number	US-202318097194-A
Country	US
Kind code	B2
Filing date	Jan 13, 2023
Priority date	Jan 13, 2023
Publication date	Mar 10, 2026
Grant date	Mar 10, 2026

Abstract

Magnetic tunnel junction pillars including ordered alloy, bottom free layers are formed using simplified seed structures including textured magnesium oxide. The seed structures can have relatively small thicknesses, thereby reducing roughness of layers formed above the seed structures and facilitating magnetic tunnel junction pillar formation from multi-layer films including such seed structures.

First claim

What is claimed is:

1 . A multi-layer pillar, comprising:
a (001)-textured magnesium oxide seed layer; a crystalline, non-magnetic chemical templating layer on the (001)-textured magnesium oxide seed layer, the (001)-textured magnesium oxide seed layer and the crystalline, non-magnetic chemical templating layer having a combined thickness of less than 100 Å; a free layer comprising an ordered magnetic alloy on the crystalline, non-magnetic chemical templating layer; a tunnel barrier on the free layer; and a reference structure over the tunnel barrier, wherein the free layer, the tunnel barrier, and the reference structure comprise a magnetic tunnel junction.

2 . The multi-layer pillar of claim 1 , wherein the (001)-textured magnesium oxide seed layer, the crystalline, non-magnetic chemical templating layer, the free layer, and the tunnel barrier comprise a layered stack having substantially uniform crystallinity.

3 . The multi-layer pillar of claim 2 , wherein the ordered magnetic alloy comprises a Heusler alloy.

4 . The multi-layer pillar of claim 1 , wherein the ordered magnetic alloy comprises a Heusler alloy.

5 . The multi-layer pillar of claim 4 , wherein the crystalline, non-magnetic chemical templating layer has a greater lattice constant than the lattice constant of the free layer.

6 . The multi-layer pillar of claim 5 , wherein the ordered magnetic alloy comprises Mn 3 Ge, tensile strained by both the crystalline, non-magnetic chemical templating layer and the tunnel barrier, and the crystalline, non-magnetic chemical templating layer comprises CoAl.

7 . The multi-layer pillar of claim 5 , wherein:
the (001)-textured magnesium oxide seed layer has a thickness of 10 Å or less; the crystalline, non-magnetic chemical templating layer has a thickness of at least 10 Å; the free layer comprises a Mn 3 Ge layer, tensile strained by both the crystalline, non-magnetic chemical templating layer and the tunnel barrier; and the tunnel barrier comprises magnesium oxide; the (001)-textured magnesium oxide seed layer, the crystalline, non-magnetic chemical templating layer, the free layer, and the tunnel barrier comprising a layered stack having substantially uniform crystallinity.

8 . A multi-layer pillar, comprising:
a template layer; a magnetic tunnel junction comprising:
a free layer comprising an ordered magnetic alloy;
a tunnel barrier on the free layer; and
a reference structure over the tunnel barrier; and
a seed layer structure having a thickness of 100 Å or less between the template layer and the magnetic tunnel junction, the seed layer structure comprising:
a (001)-textured magnesium oxide seed layer on the template layer; and
a crystalline, non-magnetic chemical templating layer on the (001)-textured magnesium oxide seed layer and contacting the free layer of the magnetic tunnel junction.

9 . The multi-layer pillar of claim 8 , wherein the ordered magnetic alloy comprises a Heusler alloy.

10 . The multi-layer pillar of claim 8 , wherein the crystalline, non-magnetic chemical templating layer has a thickness of at least 10 Å and comprises CoAl.

11 . The multi-layer pillar of claim 10 , wherein the ordered magnetic alloy comprises tensile strained Mn 3 Ge.

12 . The multi-layer pillar of claim 8 , wherein the (001)-textured magnesium oxide seed layer, the crystalline, non-magnetic chemical templating layer, the free layer, and the tunnel barrier comprise a layered stack having substantially uniform crystallinity.

13 . The multi-layer pillar of claim 12 , wherein the crystalline, non-magnetic chemical templating layer comprises CoAl.

14 . The multi-layer pillar of claim 13 , wherein the ordered magnetic alloy comprises Mn 3 Ge.

15 . The multi-layer pillar of claim 14 , wherein the tunnel barrier comprises magnesium oxide.

16 . A method of forming a pillar including a magnetic tunnel junction, comprising:
obtaining a substrate including a substrate layer and an amorphous template layer over the substrate layer; forming a (001)-textured magnesium oxide seed layer on the amorphous template layer; and forming a crystalline, non-magnetic chemical templating layer on the (001)-textured magnesium oxide seed layer, the crystalline, non-magnetic chemical templating layer and the (001)-textured magnesium oxide seed layer having a combined thickness of less than 100 Å; forming an ordered alloy free layer on the crystalline, non-magnetic chemical templating layer; forming a tunnel barrier on the ordered alloy free layer; and forming a reference structure over the tunnel barrier.

17 . The method of claim 16 , wherein forming the pillar further includes:
providing a blanket structure including the amorphous template layer, the (001)-textured magnesium oxide seed layer; the crystalline, non-magnetic chemical templating layer, the ordered alloy free layer, the tunnel barrier and the reference structure; and subjecting the blanket structure to ion beam etching to form the pillar.

18 . The method of claim 16 , wherein the crystalline, non-magnetic chemical templating layer comprises CoAl and wherein forming the free layer comprises forming tensile strained Mn 3 Ge on the crystalline, non-magnetic chemical templating layer.

19 . The method of claim 16 , wherein the free layer comprises an ordered Heusler alloy.

20 . The method of claim 19 , wherein the tunnel barrier comprises (001)-textured magnesium oxide, further including forming the (001)-textured magnesium oxide seed layer, the crystalline, non-magnetic chemical templating layer, the free layer, and the tunnel barrier as a layered stack having substantially uniform crystallinity.

Assignees

• IBM

Inventors

• Hu Guohan
• Gottwald Matthias Georg
• Bruley John
• Reznicek Alexander

Classifications

• H10B61/00

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• H10N50/01

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• H10N50/85 Primary

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• H10N50/10 Primary

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