Textured cobalt aluminum/magnesium-aluminum-oxide pedestal for memory devices

Patent metadata

Field	Value
Publication number	US-12464957-B2
Application number	US-202318137188-A
Country	US
Kind code	B2
Filing date	Apr 20, 2023
Priority date	Apr 20, 2023
Publication date	Nov 4, 2025
Grant date	Nov 4, 2025

Abstract

A memory device including a pedestal structure containing a cobalt aluminum layer and a magnesium-aluminum-oxide containing base layer both of which have a (001) crystal orientation is provided. The memory device further includes a magnetic tunnel junction (MTJ) pillar containing an ordered alloy forming an interface with the cobalt aluminum alloy layer. The use of the structural and textural engineered pedestal structure provides improved control of resistance, as well as improved magnetic properties such as higher tunnel magnetoresistance (TMR) and higher perpendicular magnetic anisotropy (PMA), and closer distribution of the ordered alloy.

First claim

What is claimed is:

1 . A memory device comprising:
a pedestal structure comprising a cobalt aluminum layer located on a first surface of a magnesium-aluminum-oxide containing base layer, the cobalt aluminum layer having a (001) crystal orientation; and a magnetic tunnel junction (MTJ) pillar located on the cobalt aluminum layer of the pedestal structure, the MTJ pillar comprising a magnetic free layer composed of an ordered magnetic alloy forming an interface with the cobalt aluminum layer of the pedestal structure.

2 . The memory device of claim 1 , wherein the pedestal structure further comprises an amorphous template layer located on a second surface of the magnesium-aluminum-oxide containing base layer, wherein the second surface of the magnesium-aluminum-oxide containing base layer is opposite the first surface of the magnesium-aluminum-oxide containing base layer.

3 . The memory device of claim 2 , further comprising a first electrode layer contacting the amorphous template layer, and a second electrode layer contacting the MTJ pillar.

4 . The memory device of claim 3 , wherein the first electrode layer is an amorphous Ta/TaN layered structure.

5 . The memory device of claim 4 , further comprising an interconnect level contacting a surface of the first electrode layer.

6 . The memory device of claim 1 , wherein the magnetic free layer is tensile strained.

7 . The memory device of claim 1 , wherein the magnesium-aluminum-oxide containing base layer comprises stoichiometric magnesium-aluminum-oxide having a formula MgAl 2 O 4 .

8 . The memory device of claim 1 , wherein the magnesium-aluminum-oxide containing base layer comprises an aluminum rich magnesium-aluminum-oxide having a formula MgAl y O x , wherein x is 1 to 1+1.5×y, and y is 1 to 4.

9 . The memory device of claim 1 , wherein the cobalt aluminum layer has a cubic crystal structure.

10 . The memory device of claim 1 , wherein the magnesium-aluminum-oxide containing base layer also has the (001) crystal orientation.

11 . The memory device of claim 1 , wherein the ordered magnetic alloy is Heusler alloy.

12 . The memory device of claim 11 , wherein the Heusler alloy comprises Mn 3 Ge, Mn 3 Ga, Mn 3 Sn, Mn 3 Sb, Co 2 MnSn, or Co 2 MnSi.

13 . The memory device of claim 1 , wherein the MTJ pillar further comprises a magnetic reference layer and a tunnel barrier layer, wherein the tunnel barrier layer is positioned between the magnetic free layer and the magnetic reference layer.

14 . The memory device of claim 1 , wherein the magnetic reference layer is a multilayered structure comprising a synthetic anti-ferromagnetic coupling layer sandwiched between a first magnetic reference layer and a second magnetic reference layer.

15 . The memory device of claim 1 , wherein the ordered magnetic alloy is Mn 3 Ge, the magnesium-aluminum-oxide containing base layer comprises stoichiometric magnesium-aluminum-oxide having a formula MgAl 2 O 4 , and the MTJ pillar further comprises a magnetic reference layer and a tunnel barrier layer, wherein the tunnel barrier layer is positioned between the magnetic free layer and the magnetic reference layer, and wherein the magnetic reference layer is a multilayered structure comprising a synthetic anti-ferromagnetic coupling layer sandwiched between a first magnetic reference layer and a second magnetic reference layer, and further wherein both the magnesium-aluminum-oxide containing base layer and the cobalt aluminum layer have a (001) crystal orientation.

16 . The memory device of claim 1 , wherein the ordered magnetic alloy is Mn 3 Ge, the magnesium-aluminum-oxide containing base layer comprises an aluminum rich magnesium-aluminum-oxide having a formula having a formula MgAl y O x , wherein x is 1 to 1+1.5×y, and y is 1 to 4, and the MTJ pillar further comprises a magnetic reference layer and a tunnel barrier layer, wherein the tunnel barrier layer is positioned between the magnetic free layer and the magnetic reference layer, and wherein the magnetic reference layer is a multilayered structure comprising a synthetic anti-ferromagnetic coupling layer sandwiched between a first magnetic reference layer and a second magnetic reference layer, and further wherein both the magnesium-aluminum-oxide containing base layer and the cobalt aluminum layer have a (001) crystal orientation.

17 . A memory device comprising:
a pedestal structure comprising a cobalt aluminum layer located on a first surface of a magnesium-aluminum-oxide containing base layer; and a magnetic tunnel junction (MTJ) pillar located on the cobalt aluminum layer of the pedestal structure, the MTJ pillar comprising a magnetic free layer composed of manganese containing Heusler alloy and forming an interface with the cobalt aluminum layer of the pedestal structure, wherein both the magnesium-aluminum-oxide containing base layer and the cobalt aluminum layer have a (001) crystal orientation.

18 . The memory device of claim 17 , wherein the manganese containing Heusler alloy comprising one of Mn 3 Ge, Mn 3 Ga, Mn 3 Sn, Mn 3 Sb, Co 2 MnSn, or Co 2 MnSi.

19 . The memory device of claim 17 , wherein the magnesium-aluminum-oxide containing base layer comprises stoichiometric magnesium-aluminum-oxide having a formula MgAl 2 O 4 .

20 . The memory device of claim 17 , wherein the magnesium-aluminum-oxide containing base layer comprises an aluminum rich magnesium-aluminum-oxide having a formula MgAl y O x , wherein x is 1 to 1+1.5×y, and y is 1 to 4.

Assignees

• IBM

Inventors

• Reznicek Alexander
• Hu Guohan
• Gottwald Matthias Georg
• Brown Stephen L

Classifications

• H10N50/20

  Spin-polarised current-controlled devices (magnetoresistive devices H10N50/10) · CPC title

• H10N50/01 Primary

  Manufacture or treatment · CPC title

• H10N50/85

  Materials of the active region · CPC title

• H01F10/3259

  Spin-exchange-coupled multilayers comprising at least a nanooxide layer [NOL], e.g. with a NOL spacer · CPC title

• H10B61/00

  Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices · CPC title