Process method and structure for high voltage mosfets
US-2020303517-A1 · Sep 24, 2020 · US
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Ding Yongping patents
Ding Yongping is listed as an inventor on 26 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Ding Yongping |
| Total patents | 26 |
| First publication | Mar 5, 2015 |
| Latest publication | Sep 24, 2020 |
Notable patents
Publications ranked by popularity score, then publication date.
High-electron-mobility transistor with buried interconnect
US-10665711-B2 · May 26, 2020 · US
Methods for fabricating anode shorted field stop insulated gate bipolar transistor
US-10522666-B2 · Dec 31, 2019 · US
High-electron-mobility transistor with buried interconnect
US-2019312137-A1 · Oct 10, 2019 · US
High-electron-mobility transistor with buried interconnect
US-10381473-B2 · Aug 13, 2019 · US
Process method and structure for high voltage MOSFETs
US-10115814-B2 · Oct 30, 2018 · US
Methods for fabricating anode shorted field stop insulated gate bipolar transistor
US-10050134-B2 · Aug 14, 2018 · US
Methods for fabricating anode shorted field stop insulated gate bipolar transistor
US-2018204937-A1 · Jul 19, 2018 · US
Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof
US-9997593-B2 · Jun 12, 2018 · US
High-electron-mobility transistor with buried interconnect
US-2018158942-A1 · Jun 7, 2018 · US
Recent patents
Latest publications not already listed above.
Process method and structure for high voltage mosfets
US-2018145167-A1 · May 24, 2018 · US
Process method and structure for high voltage MOSFETs
US-9887283-B2 · Feb 6, 2018 · US
High voltage field balance metal oxide field effect transistor (FBM)
US-9865678-B2 · Jan 9, 2018 · US
Process method and structure for high voltage MOSFETS
US-9755052-B2 · Sep 5, 2017 · US
Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof
US-9704948-B2 · Jul 11, 2017 · US
Assymetric poly gate for optimum termination design in trench power MOSFETs
US-9627526-B2 · Apr 18, 2017 · US
High voltage field balance metal oxide field effect transistor (fbm)
US-2016351659-A1 · Dec 1, 2016 · US
Methods for fabricating anode shorted field stop insulated gate bipolar transistor
US-9478646-B2 · Oct 25, 2016 · US
Methods for fabricating anode shorted field stop insulated gate bipolar transistor
US-2016284797-A1 · Sep 29, 2016 · US
High voltage field balance metal oxide field effect transistor (FBM)
US-9450083-B2 · Sep 20, 2016 · US
Method of forming SGT MOSFETs with improved termination breakdown voltage
US-9431495-B2 · Aug 30, 2016 · US
Method of forming sgt mosfets with improved termination breakdown voltage
US-2016043192-A1 · Feb 11, 2016 · US
Power trench mosfet with improved unclamped inductive switching (uis) performance and preparation method thereof
US-2016043168-A1 · Feb 11, 2016 · US
High voltage field balance metal oxide field effect transistor (fbm)
US-2015372129-A1 · Dec 24, 2015 · US
High voltage field balance metal oxide field effect transistor (FBM)
US-9129822-B2 · Sep 8, 2015 · US
Process method and structure for high voltage mosfets
US-2015060936-A1 · Mar 5, 2015 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Alpha & Omega Semiconductor | 18 |
| Ding Yongping | 5 |
| Vishay Siliconix | 4 |
| Bobde Madhur | 3 |
| Kim Jongoh | 3 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D64/117 | 14 |
| H10D30/668 | 14 |
| H10D62/127 | 13 |
| H10P30/222 | 11 |
| H10D62/393 | 11 |