Trench-based super junction structures via sidewall doping
US-2026068236-A1 · Mar 5, 2026 · US
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Chudzik Michael patents
Chudzik Michael is listed as an inventor on 30 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Chudzik Michael |
| Total patents | 30 |
| First publication | Oct 4, 2016 |
| Latest publication | Mar 5, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Indium-gallium-nitride light emitting diodes with light reflecting mirrors
US-2025301830-A1 · Sep 25, 2025 · US
Methods and structures for reducing warpage
US-2025285992-A1 · Sep 11, 2025 · US
Indium-gallium-nitride light emitting diodes with light reflecting mirrors
US-12336336-B2 · Jun 17, 2025 · US
Method and material system for tunable hybrid bond interconnect resistance
US-2025087573-A1 · Mar 13, 2025 · US
Indium-gallium-nitride light emitting diodes with increased quantum efficiency
US-2024247407-A1 · Jul 25, 2024 · US
Indium-gallium-nitride light emitting diodes with increased red-light quantum efficiency
US-11837683-B2 · Dec 5, 2023 · US
Methods to fabricate dual pore devices
US-11536708-B2 · Dec 27, 2022 · US
Nucleation layers for growth of gallium-and-nitrogen-containing regions
US-2022319836-A1 · Oct 6, 2022 · US
Indium-gallium-nitride light emitting diodes with increased red-light quantum efficiency
US-2022293821-A1 · Sep 15, 2022 · US
Recent patents
Latest publications not already listed above.
Indium-gallium-nitride light emitting diodes with light reflecting mirrors
US-2022285584-A1 · Sep 8, 2022 · US
Indium-gallium-nitride light emitting diodes with increased quantum efficiency
US-2022259766-A1 · Aug 18, 2022 · US
Deep trench integration processes and devices
US-11410873-B2 · Aug 9, 2022 · US
Deep trench integration processes and devices
US-2022165610-A1 · May 26, 2022 · US
Three color light sources integrated on a single wafer
US-11322649-B2 · May 3, 2022 · US
Three color light sources integrated on a single wafer
US-2022085238-A1 · Mar 17, 2022 · US
Horizontal gate all around and FinFET device isolation
US-11145761-B2 · Oct 12, 2021 · US
Methods to fabricate dual pore devices
US-2021215664-A1 · Jul 15, 2021 · US
Horizontal gate all around device isolation
US-10573719-B2 · Feb 25, 2020 · US
Physical vapor deposition of doped transition metal oxide and post-deposition treatment thereof for non-volatile memory applications
US-2020044152-A1 · Feb 6, 2020 · US
Horizontal gate all around and finfet device isolation
US-2020035822-A1 · Jan 30, 2020 · US
Horizontal gate all around and FinFET device isolation
US-10490666-B2 · Nov 26, 2019 · US
Horizontal gate all around and finfet device isolation
US-2018061978-A1 · Mar 1, 2018 · US
Horizontal gate all around and FinFET device isolation
US-9865735-B2 · Jan 9, 2018 · US
Multi-threshold voltage structures with a lanthanum nitride film and methods of formation thereof
US-9748354-B2 · Aug 29, 2017 · US
Method for fabricating nanowires for horizontal gate all around devices for semiconductor applications
US-2017194430-A1 · Jul 6, 2017 · US
Multi-threshold voltage structures with a lanthanum nitride film and methods of formation thereof
US-2017179252-A1 · Jun 22, 2017 · US
Horizontal gate all around device isolation
US-2017018624-A1 · Jan 19, 2017 · US
Horizontal gate all around and finfet device isolation
US-2016336405-A1 · Nov 17, 2016 · US
Horizontal gate all around device isolation
US-9460920-B1 · Oct 4, 2016 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Applied Materials Inc | 30 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D30/6735 | 10 |
| H01L29/42392 | 9 |
| H10H20/825 | 9 |
| H10D30/024 | 8 |
| H10D62/8181 | 8 |