Three color light sources integrated on a single wafer

Patent metadata

Field	Value
Publication number	US-11322649-B2
Application number	US-202017021391-A
Country	US
Kind code	B2
Filing date	Sep 15, 2020
Priority date	Sep 15, 2020
Publication date	May 3, 2022
Grant date	May 3, 2022

Abstract

Exemplary devices may include a substrate, a dielectric layer formed on the substrate, a first light source configured to emit first light characterized by a first wavelength, a second light source configured to emit second light characterized by a second wavelength different from the first wavelength, and a third light source configured to emit third light characterized by a third wavelength different from the first wavelength and the second wavelength. The first light source may be natively formed on a first region of the substrate and arranged within a first opening of the dielectric layer. The second light source may be natively formed on a second region of the substrate and arranged within a second opening of the dielectric layer. The third light source may be natively formed on a third region of the substrate and arranged within a third opening of the dielectric layer.

First claim

The invention claimed is:

1. A device comprising:
a substrate;
a dielectric layer formed on the substrate;
a first light source configured to emit first light characterized by a first wavelength, wherein the first light source is natively formed on a first region of the substrate and is arranged within a first opening of the dielectric layer, and wherein the first light source comprises:
a first semiconductor layer comprising at least one of GaN or InGaN,
a first porous semiconductor layer formed on the first semiconductor layer, the first porous semiconductor layer comprising GaN having a first porosity, and
a first relaxed semiconductor layer formed on the first porous semiconductor layer, the first relaxed semiconductor layer comprising InGaN having a first degree of relaxation;

a second light source configured to emit second light characterized by a second wavelength different from the first wavelength, wherein the second light source is natively formed on a second region of the substrate and is arranged within a second opening of the dielectric layer, and wherein the second light source comprises:
a second semiconductor layer comprising at least one of GaN or InGaN,
a second porous semiconductor layer formed on the second semiconductor layer, the second porous semiconductor layer comprising GaN having a second porosity different from the first porosity, and
a second relaxed semiconductor layer formed on the second porous semiconductor layer, the second relaxed semiconductor layer comprising InGaN having a second degree of relaxation different from the first degree of relaxation; and

a third light source configured to emit third light characterized by a third wavelength different from the first wavelength and the second wavelength, wherein the third light source is natively formed on a third region of the substrate and is arranged within a third opening of the dielectric layer.

2. The device of claim 1 , wherein the first light source comprises an emission surface having a polarity that is at least one of semi-polar or non-polar.

3. The device of claim 1 , wherein the first light source comprises a first active region having a first degree of relaxation, the second light source comprises a second active region having a second degree of relaxation, and the first degree of relaxation is different from the second degree of relaxation.

4. The device of claim 1 , wherein the first light source comprises a first active region having a first percentage of In, the second light source comprises a second active region having a second percentage of In, and the first percentage of In is different from the second percentage of In.

5. The device of claim 1 , wherein the first light source has a first shape, the second light source has a second shape, and the first shape is different from the second shape.

6. The device of claim 1 , wherein:
the InGaN in the first relaxed semiconductor layer of the first light source has a first percentage of In,
the InGaN in the second relaxed semiconductor layer of the second light source has a second percentage of In, and
the first percentage of In is different from the second percentage of In.

7. The device of claim 1 , wherein the first light source is characterized by a first critical dimension, the second light source is characterized by a second critical dimension, and the first critical dimension is different from the second critical dimension.

8. A device comprising:
a first light source configured to emit first light characterized by a first wavelength, wherein the first light source is formed on a first region of a substrate, and wherein a first semiconductor layer of the first light source comprises at least one of GaN or InGaN and is characterized by a first porosity;
a second light source configured to emit second light characterized by a second wavelength, wherein the second light source is formed on a second region of the substrate, and wherein a second semiconductor layer of the second light source comprises at least one of GaN or InGaN and is characterized by a second porosity; and
a third light source configured to emit third light characterized by a third wavelength, wherein the third light source is formed on a third region of the substrate, and a third semiconductor layer of the third light source is characterized by a third porosity,
wherein the first wavelength is different from the second wavelength and the third wavelength, and the second wavelength is different from the third wavelength, and
wherein the first porosity is different from the second porosity and the third porosity, and the second porosity is different from the third porosity.

9. The device of claim 8 , wherein the first light source comprises an emission surface that is at least one of semi-polar or non-polar.

10. The device of claim 1 , wherein:
the first semiconductor layer has a first percentage of In,
the second semiconductor layer has a second percentage of In, and
the first percentage of In is different from the second percentage of In.

Assignees

• Applied Materials Inc

Inventors

• Chudzik Michael
• Sanchez Errol Antonio C

Classifications

• H10W90/00 Primary

  Package configurations · CPC title

• H10H20/84

  Coatings, e.g. passivation layers or antireflective coatings · CPC title

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title

• H10H20/821

  of the light-emitting regions, e.g. non-planar junctions · CPC title

• H10H20/817

  characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous · CPC title