Indium-gallium-nitride light emitting diodes with light reflecting mirrors

Patent metadata

Field	Value
Publication number	US-12336336-B2
Application number	US-202117195271-A
Country	US
Kind code	B2
Filing date	Mar 8, 2021
Priority date	Mar 8, 2021
Publication date	Jun 17, 2025
Grant date	Jun 17, 2025

Abstract

Exemplary processing methods of forming a semiconductor structure may include forming subpixels on a substrate. Each of the subpixels may include a gallium-and-nitrogen-containing layer formed on an exposed portion of a nucleation layer on the substrate. The subpixels may further include a porosified region formed on or in the gallium-and-nitrogen-containing region, and an active region formed on the porosified region. The active region may include an indium-gallium-and-nitrogen-containing material. The processing methods may further include forming a first reflection layer around one of the subpixels, wherein the first reflection layer includes a first metal layer. The methods may additionally include forming a second reflection layer around another of the subpixels, wherein the second reflection layer includes a second metal that is different than the first metal.

First claim

The invention claimed is:

1. A semiconductor processing method comprising:
forming subpixels on a substrate, wherein each of the subpixels comprises:
a gallium-and-nitrogen-containing region formed on an exposed portion of a nucleation layer on the substrate;
a porosified region formed on or in the gallium-and-nitrogen-containing region; and
an active region formed on the porosified region, wherein the active region comprises an indium-gallium-and-nitrogen-containing material;

forming a first reflection layer around subpixels characterized by a peak light emission wavelength of less than or about 500 nm, wherein the first reflection layer comprises a first metal; and
forming a second reflection layer around subpixels characterized by a peak light emission wavelength of greater than or about 600 nm, wherein the second reflection layer comprises a second metal that is different than the first metal, the first metal is more efficient at reflecting blue and green light than red light, and the second metal is more efficient at reflecting red light than blue and green light.

2. The semiconductor processing method of claim 1 , wherein the method further comprises removing the substrate from the subpixels.

3. The semiconductor processing method of claim 1 , wherein the method further comprises forming optical structures on the subpixels, wherein the optical structures are formed on each of the subpixels on the gallium-and-nitrogen-containing region.

4. The semiconductor processing method of claim 3 , wherein the optical structures are formed on the nucleation layer.

5. The semiconductor processing method of claim 1 , wherein the first reflection layer is formed on a blue-light-emitting-subpixel, and the second reflection layer is formed on a red-light-emitting-subpixel.

6. The semiconductor processing method of claim 1 , wherein the first metal comprises aluminum.

7. The semiconductor processing method of claim 1 , wherein the second metal comprises copper.

8. A semiconductor processing method comprising:
forming a gallium-and-nitrogen-containing region on a nucleation layer on a substrate;
planarizing the gallium-and-nitrogen-containing region to form a planar portion of the gallium-and-nitrogen-containing region;
forming a porosified region in or on the planar portion of the gallium-and-nitrogen-containing region;
forming an active region on the porosified region, wherein the active region comprises an indium-gallium-and-nitrogen-containing material, and is characterized by a peak light emission wavelength greater than or about 400 nm, and wherein a porosity of the porosified region is selected based on the peak light emission wavelength of the active region such that the porosity is less-porous when the peak light emission wavelength is characterized as red-light emitting and more-porous when the peak light emission wavelength is characterized as green light emitting; and
forming a reflection layer on the active region, wherein the reflection layer comprises a metal.

9. The semiconductor processing method of claim 8 , wherein the gallium-and-nitrogen-containing region is formed by selective area growth on an exposed portion of the nucleation layer exposed through a patterned mask layer formed on the nucleation layer.

10. The semiconductor processing method of claim 8 , wherein the planarizing of the gallium-and-nitrogen-containing region comprises annealing the gallium-and-nitrogen-containing region to sublimate a portion of the gallium-and-nitrogen-containing region and to form the planar portion of the gallium-and-nitrogen-containing region.

11. The semiconductor processing method of claim 8 , wherein the porosified region is formed by electrochemically etching an n-doped portion of the gallium-and-nitrogen-containing region or by electrochemically etching an n-doped layer formed on the gallium-and-nitrogen-containing region.

12. The semiconductor processing method of claim 8 , wherein the active region is characterized by a peak light emission wavelength of less than 600 nm, and the metal in the reflection layer comprises aluminum.

13. The semiconductor processing method of claim 8 , wherein the active region is characterized by a peak light emission wavelength of greater than 600 nm, and the metal in the reflection layer comprises copper.

Assignees

• Applied Materials Inc

Inventors

• Khoury Michel
• Yu Lan
• Chudzik Michael
• Batres Max

Classifications

• H10H29/012

  of active-matrix LED displays · CPC title

• H10H29/034

  of coatings · CPC title

• H10H29/8421

  Reflective coatings, e.g. dielectric Bragg reflectors · CPC title

• H10H29/30

  Active-matrix LED displays · CPC title

• H10H29/142

  Two-dimensional arrangements, e.g. asymmetric LED layout · CPC title