Double gate transistor device and method of operating
US-2024275379-A1 · Aug 15, 2024 · US
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Bina Markus patents
Bina Markus is listed as an inventor on 41 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Bina Markus |
| Total patents | 41 |
| First publication | Jun 15, 2017 |
| Latest publication | Aug 15, 2024 |
Notable patents
Publications ranked by popularity score, then publication date.
Double gate transistor device and method of operating
US-12003231-B2 · Jun 4, 2024 · US
Apparatus and method for neutron transmutation doping of semiconductor wafers
US-11250966-B2 · Feb 15, 2022 · US
Power semiconductor device having a cross-trench arrangement
US-11075290-B2 · Jul 27, 2021 · US
Power Diode and Method of Manufacturing a Power Diode
US-2021226072-A1 · Jul 22, 2021 · US
Power diode and method of manufacturing a power diode
US-10978596-B2 · Apr 13, 2021 · US
Semiconductor device comprising a barrier region
US-10923578-B2 · Feb 16, 2021 · US
Double gate transistor device and method of operating
US-10903353-B2 · Jan 26, 2021 · US
IGBT with dV/dt controllability
US-10840362-B2 · Nov 17, 2020 · US
Power semiconductor device with dV/dt controllability
US-10644141-B2 · May 5, 2020 · US
Recent patents
Latest publications not already listed above.
Double gate transistor device and method of operating
US-2020136608-A1 · Apr 30, 2020 · US
Method for producing IGBT with dV/dt controllability
US-10615272-B2 · Apr 7, 2020 · US
N-channel bipolar power semiconductor device with P-layer in the drift volume
US-10546939-B2 · Jan 28, 2020 · US
Double gate transistor device and method of operating
US-10530360-B2 · Jan 7, 2020 · US
Apparatus and method for neutron transmutation doping of semiconductor wafers
US-2020005957-A1 · Jan 2, 2020 · US
Apparatus and method for neutron transmutation doping of semiconductor wafers
US-10468148-B2 · Nov 5, 2019 · US
N-channel bipolar power semiconductor device with p-layer in the drift volume
US-2019288088-A1 · Sep 19, 2019 · US
Power Semiconductor Device Having a Cross-Trench Arrangement
US-2019273155-A1 · Sep 5, 2019 · US
Power semiconductor device
US-2019259863-A1 · Aug 22, 2019 · US
Power semiconductor device
US-10355116-B2 · Jul 16, 2019 · US
Power Semiconductor Device with dV/dt Controllability
US-2019214490-A1 · Jul 11, 2019 · US
Double Gate Transistor Device and Method of Operating
US-2019198664-A1 · Jun 27, 2019 · US
N-channel bipolar power semiconductor device with p-layer in the drift volume
US-10332973-B2 · Jun 25, 2019 · US
Semiconductor Device Comprising a Barrier Region
US-2019189772-A1 · Jun 20, 2019 · US
Power semiconductor device with dV/dt controllability and cross-trench arrangement
US-10304952-B2 · May 28, 2019 · US
Double gate transistor device and method of operating
US-10276681-B2 · Apr 30, 2019 · US
Method for Producing IGBT with dV/dt Controllability
US-2019123185-A1 · Apr 25, 2019 · US
IGBT with dV/dt Controllability
US-2019123186-A1 · Apr 25, 2019 · US
Power Diode and Method of Manufacturing a Power Diode
US-2019058065-A1 · Feb 21, 2019 · US
Current measurement in a power semiconductor device
US-10153764-B2 · Dec 11, 2018 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Infineon Technologies Ag | 21 |
| Infineon Technologies Austria Ag | 20 |
| Infineon Tech Dresden Gmbh & Co Kg | 2 |
| Infineon Technologies Dresden Gmbh | 2 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D12/481 | 34 |
| H10D62/393 | 27 |
| H01L29/7397 | 26 |
| H01L29/1095 | 23 |
| H10D62/127 | 22 |