Apparatus and method for neutron transmutation doping of semiconductor wafers

Patent metadata

Field	Value
Publication number	US-11250966-B2
Application number	US-201916569676-A
Country	US
Kind code	B2
Filing date	Sep 13, 2019
Priority date	Apr 24, 2017
Publication date	Feb 15, 2022
Grant date	Feb 15, 2022

Abstract

An apparatus for processing a plurality of semiconductor wafers, the apparatus including a spallation chamber, a neutron producing material mounted in the spallation chamber, a neutron moderator, and an irradiation chamber coupled to the spallation chamber, wherein the neutron moderator is disposed between the spallation chamber and the irradiation chamber, wherein the irradiation chamber is configured to accommodate the plurality of semiconductor wafers, wherein each of the plurality of semiconductor wafers has a first surface and a second surface opposite the first surface, wherein the plurality of semiconductor wafers are positioned so that a first surface of one semiconductor wafer faces a second surface of another semiconductor wafer.

First claim

What is claimed is:

1. An apparatus for processing a plurality of semiconductor wafers, the
apparatus comprising:
a spallation chamber comprising a first end and a second end opposite the first end, wherein the first end comprising an aperture configured to receive a proton beam into the spallation chamber;
a neutron producing material mounted in the spallation chamber;
an irradiation chamber coupled to the spallation chamber, the irradiation chamber comprising a first end and a second end opposite the first end, wherein the irradiation chamber comprises a chamber door disposed at the second end and is configured to accommodate the plurality of semiconductor wafers, wherein each of the plurality of semiconductor wafers has a first surface and a second surface opposite the first surface, wherein the plurality of semiconductor wafers are positioned so that the first surface of one semiconductor wafer faces the second surface of another semiconductor wafer and the first surface of each of the plurality of semiconductor wafers faces one of the first end or the second end of the irradiation chamber; and
a neutron moderator disposed between the spallation chamber and the irradiation chamber.

2. The apparatus of claim 1 ,
wherein the neutron producing material comprises lithium, lithium/carbon mixture, tungsten, boron, or boron compounds.

3. The apparatus of claim 1 , further comprising:
an adjustable mount, wherein the neutron producing material is mounted on the adjustable mount.

4. The apparatus of claim 1 , further comprising:
a mount for the neutron producing material, the mount configured to be a cooling unit for the neutron producing material.

5. The apparatus of claim 1 ,
wherein the neutron moderator comprises heavy water, carbon, or carbon compounds.

6. The apparatus of claim 1 , wherein the irradiation chamber comprises a cylindrical cavity and is configured to accommodate the plurality of semiconductor wafers so that the plurality of semiconductor wafers are axially aligned with the irradiation chamber.

7. The apparatus of claim 1 , wherein the irradiation chamber is configured to accommodate a removable wafer rack, wherein the removable wafer rack is configured to accommodate the plurality of semiconductor wafers.

8. The apparatus of claim 1 , wherein the neutron moderator separates the spallation chamber and the irradiation chamber.

9. The apparatus of claim 1 , wherein the irradiation chamber has a diameter of at least 300 mm.

10. The apparatus of claim 1 , wherein the spallation chamber comprises a cylindrical cavity.

11. The apparatus of claim 1 , wherein the spallation chamber and the irradiation chamber each comprise neutron reflective walls configured to guide neutrons from the spallation chamber to the irradiation chamber.

12. The apparatus of claim 1 , further comprising:
a proton beam generator directed at the neutron producing material.

13. The apparatus of claim 12 ,
wherein the proton beam generator is a proton implanter.

14. The apparatus of claim 12 ,
wherein the proton beam generator comprises:
a proton producing material; and
a laser generator directed at the proton producing material,
wherein the laser generator is configured to output a laser beam.

15. The apparatus of claim 1 , wherein the spallation chamber and the irradiation chamber are linearly aligned.

16. The apparatus of claim 15 , wherein the spallation chamber and the irradiation chamber are cylindrical and axially aligned with each other.

Assignees

• Infineon Technologies Ag

Inventors

• Bina Markus
• Schulze Hans-Joachim
• Schustereder Werner

Classifications

• H10P34/20

  for inducing a nuclear reaction transmuting chemical elements · CPC title

• C30B31/20

  Doping by irradiation with electromagnetic waves or by particle radiation · CPC title

• G21G1/06 Primary

  by neutron irradiation · CPC title

• G21G4/02

  Neutron sources · CPC title

• H01L21/261

  Electricity · mapped topic