Semiconductor memory device performing recursive ZQ calibration and calibration method thereof
US-12483243-B2 · Nov 25, 2025 · US
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Bae Seungjun patents
Bae Seungjun is listed as an inventor on 35 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Bae Seungjun |
| Total patents | 35 |
| First publication | Feb 5, 2015 |
| Latest publication | Nov 25, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Buffer die and stacked memory device including the same
US-2025356892-A1 · Nov 20, 2025 · US
Equalizer for removing inter symbol interference of data signal by increasing pulse widths of logic low level and logic high level of data signal
US-2025266812-A1 · Aug 21, 2025 · US
ZQ calibration circuit for multiple interfaces
US-12394452-B2 · Aug 19, 2025 · US
Equalizer for removing inter symbol interference of data signal by increasing pulse widths of logic low level and logic high level of data signal
US-12301236-B2 · May 13, 2025 · US
Memory device and operation method thereof
US-2025022504-A1 · Jan 16, 2025 · US
Memory device and operation method thereof
US-12154616-B2 · Nov 26, 2024 · US
Semiconductor memory device performing recursive zq calibration and calibration method thereof
US-2024223187-A1 · Jul 4, 2024 · US
Storage device and data training method thereof
US-2024212729-A1 · Jun 27, 2024 · US
Zq calibration circuit for multiple interfaces
US-2024096382-A1 · Mar 21, 2024 · US
Recent patents
Latest publications not already listed above.
Equalizer for removing inter symbol interference of data signal by increasing pulse widths of logic low level and logic high level of data signal
US-2024072773-A1 · Feb 29, 2024 · US
Memory device and operation method thereof
US-2024071475-A1 · Feb 29, 2024 · US
Memory device and operation method thereof
US-11862234-B2 · Jan 2, 2024 · US
Memory device and operation method thereof
US-2022093161-A1 · Mar 24, 2022 · US
Memory device and method with data input
US-11195571-B2 · Dec 7, 2021 · US
Memory device and divided clock correction method thereof
US-11056158-B2 · Jul 6, 2021 · US
Test circuits for monitoring NBTI or PBTI
US-10969420-B2 · Apr 6, 2021 · US
Semiconductor memory device and detection clock pattern generating method thereof
US-10777246-B2 · Sep 15, 2020 · US
Memory system for adjusting clock frequency
US-10734043-B2 · Aug 4, 2020 · US
Semiconductor memory device, memory system, and refresh method thereof
US-10692561-B2 · Jun 23, 2020 · US
Semiconductor memory device and detection clock pattern generating method thereof
US-2020168259-A1 · May 28, 2020 · US
Memory device and operation method thereof
US-10666467-B2 · May 26, 2020 · US
Semiconductor memory device and detection clock pattern generating method thereof
US-10593387-B2 · Mar 17, 2020 · US
Memory device and divided clock correction method thereof
US-2020013441-A1 · Jan 9, 2020 · US
Memory device and divided clock correction method thereof
US-10453504-B2 · Oct 22, 2019 · US
Memory system for adjusting clock frequency
US-2019180797-A1 · Jun 13, 2019 · US
Semiconductor memory device and detection clock pattern generating method thereof
US-2019180806-A1 · Jun 13, 2019 · US
Memory device and operation method thereof
US-2019164594-A1 · May 30, 2019 · US
Memory device and operation method thereof
US-2019158320-A1 · May 23, 2019 · US
Test circuits for monitoring nbti or pbti
US-2019137563-A1 · May 9, 2019 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Samsung Electronics Co Ltd | 35 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| G11C2207/2254 | 22 |
| G11C11/4076 | 19 |
| G11C29/028 | 17 |
| G11C29/023 | 15 |
| G11C7/222 | 13 |