Laser doping apparatus and laser doping method
US-2017365475-A1 · Dec 21, 2017 · US
being crystalline silicon carbide
being crystalline silicon carbide · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10P32/172 |
| Official title | {being crystalline silicon carbide} |
| Display label | being crystalline silicon carbide |
| Total patents | 147 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 20 |
| 2016 | 22 |
| 2017 | 19 |
| 2018 | 14 |
| 2019 | 16 |
| 2020 | 15 |
| 2021 | 8 |
| 2022 | 10 |
| 2023 | 7 |
| 2024 | 10 |
| 2025 | 4 |
| 2026 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method of manufacturing silicon carbide semiconductor device including forming an electric field control region by a laser doping technology
US-9825145-B2 · Nov 21, 2017 · US
Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device
US-9825125-B2 · Nov 21, 2017 · US
Carbon Vacancy Defect Reduction Method for SiC
US-2017309484-A1 · Oct 26, 2017 · US
Semiconductor device and method for producing the same
US-9786740-B2 · Oct 10, 2017 · US
Manufacturing method of semiconductor device
US-9698017-B2 · Jul 4, 2017 · US
Method of forming a semiconductor device
US-2017186838-A1 · Jun 29, 2017 · US
Method of manufacturing silicon carbide semiconductor device by using protective films to activate dopants in the silicon carbide semiconductor device
US-9691616-B2 · Jun 27, 2017 · US
Method for doping impurities, method for manufacturing semiconductor device
US-9659775-B2 · May 23, 2017 · US
Method for manufacturing silicon carbide semiconductor device by selectively removing silicon from silicon carbide substrate to form protective carbon layer on silicon carbide substrate for activating dopants
US-9659773-B2 · May 23, 2017 · US
Impurity introducing method, impurity introducing apparatus, and method of manufacturing semiconductor element
US-9659774-B2 · May 23, 2017 · US
Method of manufacturing silicon carbide semiconductor device by forming metal-free protection film
US-9653297-B2 · May 16, 2017 · US
Laser irradiation apparatus and laser irradiation method
US-2017103895-A1 · Apr 13, 2017 · US
Method of manufacturing silicon carbide semiconductor device
US-9613809-B2 · Apr 4, 2017 · US
Semiconductor device
US-2017077299-A1 · Mar 16, 2017 · US
Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device
US-2017047394-A1 · Feb 16, 2017 · US
Semiconductor device
US-9570436-B2 · Feb 14, 2017 · US
Silicon-carbide trench gate mosfets
US-2017012119-A1 · Jan 12, 2017 · US
Silicon carbide bipolar junction transistor including shielding regions
US-9515176-B2 · Dec 6, 2016 · US
Silicon carbide semiconductor device having layer covering corner portion of depressed portion
US-9515197-B2 · Dec 6, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10P32/172?
- CPC H10P32/172 is the Cooperative Patent Classification code for “being crystalline silicon carbide.”
- How many patents are filed under CPC H10P32/172 (being crystalline silicon carbide)?
- Our database includes 147 publications tagged with this CPC code.
- Is patent activity under CPC H10P32/172 growing?
- Publication counts under this code: 10 in 2024 vs 4 in 2025 (latest complete years).