Method for manufacturing silicon carbide semiconductor device by selectively removing silicon from silicon carbide substrate to form protective carbon layer on silicon carbide substrate for activating dopants

Patent metadata

Field	Value
Publication number	US-9659773-B2
Application number	US-201415024171-A
Country	US
Kind code	B2
Filing date	Aug 11, 2014
Priority date	Sep 25, 2013
Publication date	May 23, 2017
Grant date	May 23, 2017

Abstract

A method for manufacturing a SiC semiconductor device includes the steps of: forming an impurity region in a SiC layer; forming a first carbon layer on a surface of the SiC layer having the impurity region formed therein, by selectively removing silicon from the surface; forming a second carbon layer on the first carbon layer; and heating the SiC layer having the first carbon layer and the second carbon layer formed therein.

First claim

The invention claimed is:

1. A method for manufacturing a silicon carbide semiconductor device, comprising the steps of:
forming an impurity region in a silicon carbide layer;
forming a first carbon layer on a surface of the silicon carbide layer having the impurity region formed therein by selectively removing silicon from the surface;
forming a second carbon layer on the first carbon layer; and
heating the silicon carbide layer having the first carbon layer and the second carbon layer formed on the silicon carbide layer,
wherein, in the step of forming the second carbon layer, the second carbon layer constituted of a plurality of layers is formed,
wherein a plurality of laminated carbon layers constituting the plurality of layers are formed such that the laminated carbon layer close to the surface of the silicon carbide layer has a relatively high density, and
wherein, in the step of forming the first carbon layer, silicon is selectively removed from the surface of the silicon carbide layer by reaction of a halogen element and silicon.

2. The method for manufacturing the silicon carbide semiconductor device according to claim 1 , wherein, in the step of forming the first carbon layer, the first carbon layer is formed to have a density higher than that of the second carbon layer.

3. The method for manufacturing the silicon carbide semiconductor device according to claim 1 , wherein the second carbon layer is formed by at least one method selected from the group consisting of a method of carbonizing a resist film, a CVD method, and a sputtering method.

4. The method for manufacturing the silicon carbide semiconductor device according to claim 1 , wherein, in the step of heating the silicon carbide layer, the silicon carbide layer is heated at a temperature of more than or equal to 1600° C. and less than or equal to 1900° C.

5. The method for manufacturing the silicon carbide semiconductor device according to claim 1 , wherein, in the step of forming the first carbon layer, the first carbon layer having a thickness of more than or equal to 10 nm and less than or equal to 50 nm is formed.

6. The method for manufacturing the silicon carbide semiconductor device according to claim 1 , wherein, in the step of forming the second carbon layer, the second carbon layer having a thickness of more than or equal to 50 nm is formed.

7. The method for manufacturing the silicon carbide semiconductor device according to claim 1 , wherein, in the steps of forming the first carbon layer and forming the second carbon layer, the first carbon layer and the second carbon layer are formed such that a total thickness of the first carbon layer and the second carbon layer is less than or equal to 1 μm.

8. The method for manufacturing the silicon carbide semiconductor device according to claim 1 , wherein, in the step of forming the first carbon layer, silicon is selectively removed from the surface of the silicon carbide layer by heating the silicon carbide layer in an atmosphere including a gas containing the halogen element.

9. The method for manufacturing the silicon carbide semiconductor device according to claim 1 , wherein, in the step of forming the first carbon layer, silicon is selectively removed from the surface of the silicon carbide layer by holding the silicon carbide layer in a plasma containing the halogen element.

10. The method for manufacturing the silicon carbide semiconductor device according to claim 1 , further comprising the step of removing the first carbon layer and the second carbon layer, after the step of heating the silicon carbide layer.

11. The method for manufacturing the silicon carbide semiconductor device according to claim 1 , wherein the surface of the silicon carbide layer includes a main surface having an off angle of less than or equal to 8° relative to a (000-1) plane.

12. A method for manufacturing the silicon carbide semiconductor device, comprising the steps of:
forming an impurity region in a silicon carbide layer;
forming a first carbon layer on a surface of the silicon carbide layer having the impurity region formed therein by selectively removing silicon from the surface;
forming a second carbon layer on the first carbon layer; and
heating the silicon carbide layer having the first carbon layer and the second carbon layer formed on the silicone carbide layer,
wherein, in the step of forming the second carbon layer, the second carbon layer is formed by heating the resist film at a temperature of more than or equal to 800° C. and less than or equal to 1000° C. and carbonizing the resist film, and
wherein, in the step of forming the first carbon layer, silicon is selectively removed from the surface of the silicon carbide layer by reaction of a halogen element and silicon.

13. The method for manufacturing the silicon carbide semiconductor device according to claim 12 , wherein, in the step of heating the silicon carbide layer, the silicon carbide layer is heated successively after carbonization of the resist film is completed in the step of forming the second carbon layer.

Assignees

• Sumitomo Electric Industries

Inventors

• Masuda Takeyoshi

Classifications

• H10P95/08

  Planarisation of organic insulating materials · CPC title

• H10P14/6902

  composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon · CPC title

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H10P50/00

  Etching of wafers, substrates or parts of devices · CPC title