Heat treatment method and heat treatment apparatus for semiconductor substrate
US-2017011921-A1 · Jan 12, 2017 · US
Manufacturing method of semiconductor device
US9698017B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9698017-B2 |
| Application number | US-201615056543-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 29, 2016 |
| Priority date | Mar 3, 2015 |
| Publication date | Jul 4, 2017 |
| Grant date | Jul 4, 2017 |
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- Title
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Abstract
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A manufacturing method of a semiconductor device is provided by forming a trench in a surface of a SiC substrate, positioning a protective substrate to cover the trench, and annealing the SiC substrate and the protective substrate.
First claim
Opening claim text (preview).
What is claimed is: 1. A manufacturing method of a semiconductor device, the method comprising: forming a trench in a surface of a SiC substrate; positioning a protective substrate to cover the trench; and annealing the SiC substrate and the protective substrate in a heating furnace, in the annealing of the SiC substrate and the protective substrate the annealing is performed such that an atmospheric pressure inside the trench becomes higher than an atmospheric pressure outside the trench in the heating furnace. 2. The manufacturing method according to claim 1 , wherein a melting point of the protective substrate is equal to or higher than 2000 degrees Celsius, and in the annealing of the SiC substrate and the protective substrate, the SiC substrate is annealed at a temperature equal to or higher than 1700 degrees Celsius. 3. The manufacturing method according to claim 1 , the method further comprising: forming a protective film on the surface of the SiC substrate after the forming of the trench; and removing the protective film after the annealing of the SiC substrate and the protective substrate, wherein in the positioning of the protective substrate, the protective substrate is positioned on the surface side of the SiC substrate on which the protective film has been formed. 4. The manufacturing method according to claim 1 , the method further comprising: introducing impurities to the SiC substrate before the annealing of the SiC substrate and the protective substrate. 5. The manufacturing method according to claim 1 , wherein in the positioning of the protective substrate, the SiC substrate is mounted on the protective substrate. 6. The manufacturing method according to claim 1 , wherein the protective substrate consists of Carbon or a compound including Carbon. 7. The manufacturing method according to claim 1 , further comprising: carrying the SiC substrate with the protective substrate into the heating furnace before annealing the SiC substrate and the protective substrate such that the protective substrate is used as a carrying plate for carrying the SiC substrate. 8. The manufacturing method according to claim 1 , wherein in the positioning of the protective substrate the protective substrate is directly positioned onto the surface of the SiC substrate.
Assignees
Inventors
Classifications
used to protect an active side of a device or wafer · CPC title
being crystalline silicon carbide · CPC title
- H10P95/90Primary
Thermal treatments, e.g. annealing or sintering · CPC title
using temporarily an auxiliary support · CPC title
into crystalline silicon carbide · CPC title
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Frequently asked questions
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- What does patent US9698017B2 cover?
- A manufacturing method of a semiconductor device is provided by forming a trench in a surface of a SiC substrate, positioning a protective substrate to cover the trench, and annealing the SiC substrate and the protective substrate.
- Who is the assignee on this patent?
- Toyota Motor Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P95/90. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jul 04 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).