Impurity introducing method, impurity introducing apparatus, and method of manufacturing semiconductor element

Patent metadata

Field	Value
Publication number	US-9659774-B2
Application number	US-201514729491-A
Country	US
Kind code	B2
Filing date	Jun 3, 2015
Priority date	Jul 4, 2014
Publication date	May 23, 2017
Grant date	May 23, 2017

Abstract

A method for introducing impurity into a semiconductor substrate includes bringing a solution containing a compound of an impurity element into contact with a primary surface of a semiconductor substrate; and irradiating the primary surface of the semiconductor substrate with a laser beam through the solution to raise a temperature of the primary surface of the semiconductor substrate at a position irradiated by the laser beam so as to dope the impurity element into the semiconductor substrate. The laser beam irradiation is performed such that the raised temperature does not return to room temperature until a prescribed dose of the impurity element is caused to be doped into the semiconductor substrate.

First claim

What is claimed is:

1. A method for introducing impurity into a semiconductor substrate, comprising:
bringing a solution containing a compound of an impurity element into contact with a primary surface of a semiconductor substrate; and
irradiating the primary surface of said semiconductor substrate with a laser beam through the solution to raise a temperature of the primary surface of said semiconductor substrate at a position irradiated by the laser beam so as to dope the impurity element into the semiconductor substrate,
wherein said laser beam irradiation is performed such that said raised temperature does not return to room temperature until a prescribed dose of the impurity element is caused to be doped into the semiconductor substrate,
wherein irradiating the semiconductor substrate with the laser beam includes:
providing an optical fiber with one end face disposed within said solution, and irradiating the primary surface of said semiconductor substrate with the laser beam that is emitted from said one end face of the optical fiber, and

wherein in the step of irradiating said semiconductor substrate with the laser beam, said one end face of the optical fiber is angled with respect to a longitudinal direction of an adjacent end portion of the optical fiber, such that an angle of incidence of the laser beam to said solution is a Brewster angle with respect to said solution.

2. The method according to claim 1 , wherein said laser beam is a continuous wave.

3. The method according to claim 1 , wherein a waveform of said laser beam is a continuous waveform formed by a plurality of pulse waves joining together.

4. The method according to claim 2 , wherein irradiating the semiconductor substrate with the laser beam includes:
moving said semiconductor substrate in an X-Y direction defined within a plane parallel to the primary surface of said semiconductor substrate during the laser irradiation so as to directly define a pattern on the primary surface of the semiconductor substrate in which said impurity element is introduced to said semiconductor substrate.

5. The method according to claim 3 , wherein irradiating the semiconductor substrate with the laser beam includes:
moving said semiconductor substrate in an X-Y direction defined within a plane parallel to the primary surface of said semiconductor substrate during the laser irradiation so as to directly define a pattern on the primary surface of the semiconductor substrate in which said impurity element is introduced to said semiconductor substrate.

6. The method according to claim 1 ,
wherein the impurity element in the solution is a first conductivity type, and
wherein the primary surface of the semiconductor substrate into which the impurity element is doped is one of the first conductivity type or a second conductivity type so that the laser beam irradiation of the semiconductor substrate with the laser beam forms a first semiconductor region of the first conductivity type in the primary surface of said semiconductor substrate.

7. The method according to claim 6 , further comprising:
forming a second semiconductor region of the second conductivity type in a surface of said first semiconductor region of said first conductivity type in the primary surface of said semiconductor substrate by bringing said semiconductor substrate into contact with a solution containing a compound of a second conductivity type impurity element and by irradiating said semiconductor substrate with a laser beam, said laser beam irradiation being performed such that a temperature of the semiconductor substrate raised by the laser beam at a position irradiated by the laser beam does not return to room temperature until a prescribed dose of the second conductivity type impurity element is caused to be doped into the semiconductor substrate.

8. The method according to claim 7 , further comprising:
forming a contact region of the first conductivity type having an impurity concentration greater than that of said first semiconductor region of the first conductivity type in the first semiconductor region by bringing said semiconductor substrate into contact with a solution containing a compound of a first conductivity type impurity element and by irradiating said semiconductor substrate with a laser beam, said laser beam irradiation being performed such that a temperature of the semiconductor substrate raised by the laser beam at a position irradiated by the laser beam does not return to room temperature until a prescribed dose of the first conductivity type impurity element is caused to be doped into the semiconductor substrate.

9. The method according to claim 8 , further comprising:
forming an ohmic electrode layer on said contact region.

10. The method according to claim 6 , further comprising:
forming a second semiconductor region of the first conductive type having an impurity concentration greater than that of said first semiconductor region of the first conductivity type in the first semiconductor region by bringing said semiconductor substrate into contact with a solution containing a compound of a first conductivity type impurity element and by irradiating said semiconductor substrate with a laser beam, said laser beam irradiation being performed such that a temperature of the semiconductor substrate raised by the laser beam at a position irradiated by the laser beam does not return to room temperature until a prescribed dose of the first conductivity type impurity element is caused to be doped into the semiconductor substrate.

11. The method according to claim 1 , wherein in the step of irradiating said semiconductor substrate with the laser beam, said adjacent end portion of the optical fiber is angled relative to a plane of the primary surface of the said semiconductor substrate such that said one end face of the optical fiber is parallel to the primary surface, and that the laser beam emitted from said one end face of the optical fiber impinges upon the primary surface of said semiconductor substrate in a direction normal to the primary surface of the semiconductor substrate.

12. The method according to claim 1 , wherein said one end face of the optical fiber is disposed in parallel with the primary surface of the semiconductor substrate with a distance between said one end face and the primary surface being 0.05 mm to 10.00 mm.

13. An impurity introducing apparatus, comprising:
a solution vessel configured to store therein a solution containing a compound of an impurity element and configured to hold a semiconductor substrate upon a bottom surface thereof;
a support platform that supports the solution vessel; and
a laser optical system, including an optical fiber having one end face configured to be disposed within said solution adjacent to a primary surface of the semiconductor substrate so as to raise a temperature of the primary surface of said semiconductor substrate by inputting a laser beam into the optical fiber and irradiating said semiconductor substrate with the laser beam emerging from said one end face of the optical fiber through the solution located between said one end face and said semiconductor substrate, thereby doping the impurity element into the semiconductor substrate,
wherein in the laser optical system, said one end face of the optical fiber is angled with respect to a longitudinal direction of an adjacent end portion of the optical fiber so that an angle of incidence of the laser beam to said solution is a Brewster angle with respect to said solution.

14. The impurity introducing apparatus according to claim 13 , wherein said laser optical system includes a las

Assignees

• Fuji Electric Co Ltd

Inventors

• Nakazawa Haruo
• Iguchi Kenichi
• Ogino Masaaki

Classifications

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10P32/172 Primary

  being crystalline silicon carbide · CPC title

• H10D30/66

  Vertical DMOS [VDMOS] FETs · CPC title

• H01L21/0455 Primary

  Electricity · mapped topic

• H01L21/268

  Electricity · mapped topic