Semiconductor device and method for producing the same

Patent metadata

Field	Value
Publication number	US-9786740-B2
Application number	US-201514619631-A
Country	US
Kind code	B2
Filing date	Feb 11, 2015
Priority date	Mar 20, 2014
Publication date	Oct 10, 2017
Grant date	Oct 10, 2017

Abstract

A semiconductor device of according to an embodiment of the present disclosure includes a n-type SiC layer; a SiC region provided on the n-type SiC layer and containing H (hydrogen) or D (deuterium) in an amount of 1×10 18 cm −3 or more and 1×10 22 cm −3 or less; and a metal layer provided on the SiC region.

First claim

What is claimed is:

1. A semiconductor device comprising:
a n-type SiC layer;
a SiC region provided on the n-type SiC layer, the SiC region containing H (hydrogen) or D (deuterium) in an amount of 1×10 18 cm −3 or more and 1×10 22 cm −3 or less, the H (hydrogen) or D (deuterium) being positioned at Si (silicon) site of SiC structure; and
a metal layer provided on the SiC region.

2. The device according to claim 1 , wherein the SiC region is metallic.

3. The device according to claim 1 , wherein the work function of the SiC region is 6.0 eV or more.

4. The device according to claim 1 , wherein the film thickness of the SiC region is 1 nm or more.

5. A semiconductor device comprising:
a p-type SiC layer;
a SiC region provided on the p-type SiC layer, the SiC region containing H (hydrogen) or D (deuterium) in an amount of 1×10 18 cm −3 or more and 1×10 22 cm −3 or less, the H (hydrogen) or D (deuterium) being positioned at the C (carbon) site of SiC structure; and
a metal layer provided on the SiC region.

6. The device according to claim 5 , wherein the SiC region is metallic.

7. The device according to claim 5 , wherein the work function of the SiC region is 4.0 eV or less.

8. The device according to claim 5 , wherein the film thickness of the SiC region is 1 nm or more.

9. The device according to claim 1 , wherein 80% or more of the H (hydrogen) or D (deuterium) is positioned at Si (silicon) site of SiC structure.

10. The device according to claim 1 , wherein the metal layer comprises at least one member selected from the group consisting of TiN (titanium nitride), W (tungsten), polycrystalline silicon, Al (aluminum), Ti (titanium), Cu (copper), Ni (nickel), Pt (platinum) and Au (gold).

11. The device according to claim 5 , wherein 80% or more of the H (hydrogen) or D (deuterium) is positioned at C (carbon) site of SiC structure.

12. The device according to claim 5 , wherein the metal layer comprises at least one member selected from the group consisting of TiN (titanium nitride), W (tungsten), polycrystalline silicon, Al (aluminum), Ti (titanium), Cu (copper), Ni (nickel), Pt (platinum) and Au (gold).

13. A method for producing a semiconductor device according to claim 1 , the method comprising:
subjecting a n-type SiC layer to a first heat treatment and evaporating at least a part of Si (silicon) in the vicinity of the surface of the SiC layer;
subjecting the SiC layer to a second heat treatment at a temperature lower than a temperature of the first heat treatment in an atmosphere containing H (hydrogen) or D (deuterium); and
forming a metal layer on the SiC layer after the second heat treatment.

14. The method according to claim 13 , wherein after the forming of the metal layer, a third heat treatment is performed at a temperature lower than the temperature of the second heat treatment.

15. The method according to claim 13 , wherein a metallic SiC region is formed on the surface of the SiC layer by the second heat treatment.

16. The method according to claim 13 , wherein the first heat treatment is performed at 1000° C. or higher and 1600° C. or lower.

17. The method according to claim 13 , wherein the second heat treatment is performed at 400° C. or higher and 1200° C. or lower.

18. The method according to claim 13 , herein in the second heat treatment, the atmosphere containing H (hydrogen) or D (deuterium) is plasma H or plasma D, and the heat treatment temperature is 0° C. or higher and 1000° C. or lower.

19. The method according to claim 14 , wherein the third heat treatment is performed at 400° C. or higher and 1000° C. or lower.

Assignees

• Toshiba Kk

Inventors

• Shimizu Tatsuo
• Shinohe Takashi

Classifications

• H10P32/172

  being crystalline silicon carbide · CPC title

• H10P30/2042 Primary

  into crystalline silicon carbide · CPC title

• H10P30/208

  of electrically inactive species · CPC title

• H10P30/204

  into Group IV semiconductors · CPC title

• H10P30/21

  of electrically active species · CPC title