Method of manufacturing silicon carbide semiconductor device including forming an electric field control region by a laser doping technology

Patent metadata

Field	Value
Publication number	US-9825145-B2
Application number	US-201615067115-A
Country	US
Kind code	B2
Filing date	Mar 10, 2016
Priority date	Apr 24, 2015
Publication date	Nov 21, 2017
Grant date	Nov 21, 2017

Abstract

When p-type impurities are implanted into a SiC substrate using a laser, controlling the concentration is difficult. A p-type impurity region is formed by a laser in a region where the control of the concentration in the SiC substrate is not necessary almost at all. A SiC semiconductor device having withstanding high voltage is manufactured at a lower temperature process compared to ion implantation process. A method of manufacturing a silicon carbide semiconductor device includes forming, on one main surface of a first conductivity-type silicon carbide substrate, a first conductivity-type drift layer having a lower concentration than that of the silicon carbide substrate; forming, on a front surface side of the drift layer, a second conductivity-type electric field control region by a laser doping technology; forming a Schottky electrode in contact with the drift layer; and forming, on the other main surface of the silicon carbide substrate, a cathode electrode.

First claim

What is claimed is:

1. A method of manufacturing a silicon carbide semiconductor device, comprising:
forming, on one main surface of a first conductivity-type silicon carbide substrate, a first conductivity-type drift layer having a lower concentration than that of the silicon carbide substrate;
forming, on a front surface side of the drift layer, a second conductivity-type electric field control region by a laser doping technology, the second conductivity-type electric field control region including (i) a ring-shaped electric field relaxation region formed at an outer circumferential portion in a region where the drift layer and a Schottky electrode contact with each other and (ii) a plurality of junction barrier regions selectively formed on an inner circumferential side of the electric field relaxation region;
forming the Schottky electrode in contact with the drift layer; and
forming, on another main surface of the silicon carbide substrate, a cathode electrode,
forming an ohmic electrode which has an ohmic connection to the plurality of selectively formed junction barrier regions; and
forming an anode electrode in direct contact with the Schottky electrode and the ohmic electrode after the formation of the ohmic electrode.

2. The method according to claim 1 , wherein the Schottky electrode and the ohmic electrode are the same material.

3. The method according to claim 1 , wherein the ohmic electrode and the anode electrode are the same material.

4. The method according to claim 1 , wherein the formation of the second conductivity-type electric field control region by the laser doping technology comprises:
forming a mask layer having a plurality of openings on the drift layer; and
implanting aluminum into the drift layer through the plurality of openings by irradiating the drift layer with a laser in a state where the drift layer is exposed to a gas containing aluminum.

5. The method according to claim 4 , wherein the formation of the second conductivity-type electric field control region by the laser doping technology further comprises removing the plurality of patterns.

6. The method according to claim 1 , wherein a laser light source in the laser doping technology in the formation of the electric field control region is any of KrF, ArF, XeF, XeCl, and YAG3ω.

7. A method of manufacturing a silicon carbide semiconductor device, comprising:
forming, on one main surface of a first conductivity-type silicon carbide substrate, a first conductivity-type drift layer having a lower concentration than that of the silicon carbide substrate;
forming, on a front surface side of the drift layer, a second conductivity-type electric field control region by a laser doping technology, the second conductivity-type electric field control region including (i) a ring-shaped electric field relaxation region formed at an outer circumferential portion in a region where the drift layer and a Schottky electrode contact with each other (ii) one or more field limiting rings provided on an outer circumferential side of the ring-shaped electric field relaxation region and (iii) a ring-shaped channel stopper region provided on an outer circumferential side of the one or more field limiting rings,
forming the Schottky electrode in contact with the drift layer;
forming, on another main surface of the silicon carbide substrate, a cathode electrode;
forming an insulating film in contact with the drift layer;
forming a channel stopper electrode in contact with the channel stopper region and the insulating film after the formation of the insulating film; and
forming an anode electrode in contact with the Schottky electrode after the formation of the Schottky electrode,
wherein a region between the channel stopper electrode and the anode electrode is covered by the insulating film.

8. The method according to claim 7 , further comprising forming a field plate electrode connected to the one or more field limiting rings.

9. The method according to claim 7 , wherein the formation of the second conductivity-type electric field control region by the laser doping technology comprises:
forming a mask layer having a plurality of openings on the drift layer; and
implanting aluminum into the drift layer through the plurality of openings by irradiating the drift layer with a laser in a state where the drift layer is exposed to a gas containing aluminum.

10. The method according to claim 9 , wherein the formation of the second conductivity-type electric field control region by the laser doping technology further comprises removing the plurality of patterns.

11. The method according to claim 7 , wherein a laser light source in the laser doping technology in the formation of the electric field control region is any of KrF, ArF, XeF, XeCl, and YAG3ω.

12. The method according to claim 7 , further comprising forming one or more trenches after the formation of the first conductivity-type drift layer and before the formation of the electric field control region, wherein the one or more field limiting rings are formed below the one or more trenches.

13. A method of manufacturing a silicon carbide semiconductor device, comprising:
forming, on one main surface of a first conductivity-type silicon carbide substrate, a first conductivity-type drift layer having a lower concentration than that of the silicon carbide substrate;
forming, on a front surface side of the drift layer, a second conductivity-type electric field control region by a laser doping technology;
forming a Schottky electrode in contact with the drift layer; and
forming, on another main surface of the silicon carbide substrate, a cathode electrode,
wherein the formation of the second conductivity-type electric field control region by the laser doping technology comprises:
depositing an aluminum layer onto the drift layer;
forming a plurality of patterns by patterning the aluminum layer; and
implanting aluminum into the drift layer through the plurality of patterns by irradiating the plurality of patterns with a laser.

14. The method according to claim 13 , wherein the formation of the second conductivity-type electric field control region by the laser doping technology further comprises removing the plurality of patterns.

15. The method according to claim 13 , wherein a laser light source in the laser doping technology in the formation of the electric field control region is any of KrF, ArF, XeF, XeCl, and YAG3ω.

Assignees

• Fuji Electric Co Ltd

Inventors

• Yoshikawa Koh
• Nakazawa Haruo
• Iguchi Kenichi
• Seki Yasukazu

Classifications

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10P32/172

  being crystalline silicon carbide · CPC title

• H10D64/0123

  to silicon carbide · CPC title

• H10D62/8325 Primary

  Silicon carbide · CPC title

• H10D8/051 Primary

  of Schottky diodes · CPC title