Light Emitting Diode Epitaxial Structure and Light Emitting Diode
US-2024297271-A1 · Sep 5, 2024 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L33/025 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 561 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 42 |
| 2016 | 58 |
| 2017 | 69 |
| 2018 | 61 |
| 2019 | 67 |
| 2020 | 52 |
| 2021 | 49 |
| 2022 | 45 |
| 2023 | 49 |
| 2024 | 59 |
| 2025 | 10 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Ii-vi based light emitting semiconductor device
US-2016293799-A1 · Oct 6, 2016 · US
Light emitting device
US-9455371-B2 · Sep 27, 2016 · US
Reducing or eliminating nanopipe defects in III-nitride structures
US-9406836-B2 · Aug 2, 2016 · US
Light emitting device
US-9397257-B2 · Jul 19, 2016 · US
Semiconductor light emitting device
US-2016190388-A1 · Jun 30, 2016 · US
Method for separating epitaxial layers from growth substrates, and semiconductor device using same
US-2016172539-A1 · Jun 16, 2016 · US
Semiconductor light emitting device
US-9362447-B2 · Jun 7, 2016 · US
Nitride semiconductor light-emitting element
US-9324908-B2 · Apr 26, 2016 · US
Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device
US-9312165-B2 · Apr 12, 2016 · US
Light-emitting device and method for manufacturing the same
US-9312303-B2 · Apr 12, 2016 · US
Light emitting device and light emitting device package including the same
US-9299884-B2 · Mar 29, 2016 · US
III nitride semiconductor substrate, epitaxial substrate, and semiconductor device
US-9299890-B2 · Mar 29, 2016 · US
Nitride light emitting element and method for manufacturing the same
US-2016056327-A1 · Feb 25, 2016 · US
Optoelectronic component and method of producing an optoelectronic component
US-2016049543-A1 · Feb 18, 2016 · US
Method for separating epitaxial layers from growth substrates, and semiconductor device using same
US-9263255-B2 · Feb 16, 2016 · US
Semiconductor light emitting device, light emitting device package comprising the same, and lighting device comprising the same
US-2016043279-A1 · Feb 11, 2016 · US
Composite substrates, a method of producing the same, a method of producing functional layers made of nitrides of group 13 elements, and functional devices
US-9231155-B2 · Jan 5, 2016 · US
Semiconductor Layer Sequence and Method for Producing a Semiconductor Layer Sequence
US-2015364641-A1 · Dec 17, 2015 · US
Method for manufacturing light emitting element
US-9209351-B1 · Dec 8, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L33/025?
- CPC H01L33/025 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L33/025 (Electricity)?
- Our database includes 561 publications tagged with this CPC code.
- Is patent activity under CPC H01L33/025 growing?
- Publication counts under this code: 59 in 2024 vs 10 in 2025 (latest complete years).