Light Emitting Diode Epitaxial Structure and Light Emitting Diode
US-2024297271-A1 · Sep 5, 2024 · US
Nitride semiconductor light-emitting element
US9324908B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9324908-B2 |
| Application number | US-201414653703-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 28, 2014 |
| Priority date | Apr 30, 2013 |
| Publication date | Apr 26, 2016 |
| Grant date | Apr 26, 2016 |
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Abstract
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Provided is a nitride semiconductor light-emitting element including in order a first n-type nitride semiconductor layer, a second n-type nitride semiconductor layer, an n-type electron-injection layer, a light-emitting layer, and a p-type nitride semiconductor layer, wherein the average n-type dopant concentration of the second n-type nitride semiconductor layer is 0.53 times or less as high as the average n-type dopant concentration of the first n-type nitride semiconductor layer, and the average n-type dopant concentration of the n-type electron-injection layer is 1.5 times or more as high as the average n-type dopant concentration of the second n-type nitride semiconductor layer.
First claim
Opening claim text (preview).
The invention claimed is: 1. A nitride semiconductor light-emitting element comprising in order: a first n-type nitride semiconductor layer, a second n-type nitride semiconductor layer, an n-type electron-injection layer, said n-type electron-injection layer having a larger band gap than said second n-type nitride semiconductor layer, said n-type electron-injection layer containing Al, a light-emitting layer, and a p-type nitride semiconductor layer, the average n-type do…
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Classifications
Electricity · mapped topic
Electricity · mapped topic
- H10H20/8215Primary
Electricity · mapped topic
- H10H20/825Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9324908B2 cover?
- Provided is a nitride semiconductor light-emitting element including in order a first n-type nitride semiconductor layer, a second n-type nitride semiconductor layer, an n-type electron-injection layer, a light-emitting layer, and a p-type nitride semiconductor layer, wherein the average n-type dopant concentration of the second n-type nitride semiconductor layer is 0.53 times or less as high a…
- Who is the assignee on this patent?
- Sharp Kk
- What technology area does this patent fall under?
- Primary CPC classification H10H20/8215. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Apr 26 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).