Ii-vi based light emitting semiconductor device

Patent metadata

Field	Value
Publication number	US-2016293799-A1
Application number	US-201615177542-A
Country	US
Kind code	A1
Filing date	Jun 9, 2016
Priority date	Jun 29, 2012
Publication date	Oct 6, 2016
Grant date	—

Abstract

The invention provides a light emitting semiconductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide based layer comprises an aluminum doped zinc magnesium oxide layer having the nominal composition Zn 1-x Mg x O with 1-350 ppm Al, wherein x is in the range of 0<x≦0.3. The invention further provides a method for the production of such aluminum doped zinc magnesium oxide, the method comprising heat treating a composition comprising Zn, Mg and Al with a predetermined composition at elevated temperatures, and subsequently annealing the heat treated composition to provide said aluminum doped zinc magnesium oxide.

First claim

1 . A luminescent material comprising zinc magnesium oxide having the nominal composition Zn 1-x Mg x O with 1-350 ppm Al, wherein x is in the range of 0<x≦0.3.

2 . The luminescent material according to claim 1 , wherein the zinc magnesium oxide contains 5-40 ppm Al, and wherein x is in the range of 0.02<x≦0.2.

3 . The luminescent material according to claim 1 , wherein the zinc magnesium oxide is polycrystalline.

4 . The luminescent material according to claim 1 , wherein the zinc magnesium oxide forms a lattice and the Al is partly present in the zinc magnesium oxide lattice as dopant.

5 . The luminescent material according to claim 1 , wherein the zinc magnesium oxide forms a lattice and the Al at least partially replaces Zn or Mg lattice positions.

6 . The luminescent material according to claim 1 , wherein the zinc magnesium oxide forms a lattice and the Al at least partially occupies interstitial positions in the lattice.

7 . The luminescent material according to claim 1 , wherein a content of sulfur in the luminescent material is lower than 50 ppm.

8 . A method for producing a light emitting semiconductor device, the method comprising:
providing a support, forming a stack on the support, wherein the stack comprises a cathode, a semiconductor layer comprising an emissive material configured to emit in the range of 300-900 nm, an insulating layer, and an anode, wherein the cathode is in electrical contact with the semiconductor layer, wherein the anode is in electrical contact with the insulating layer, wherein the insulating layer has a thickness in the range of up to 50 nm, wherein the semiconductor layer comprises aluminum doped zinc magnesium oxide layer having 1-350 ppm Al.

9 . The method according to claim 8 , further comprising:
forming the cathode on the support, forming the semiconductor layer on the cathode, forming the insulating layer on the semiconductor layer, forming the anode on the insulating layer, followed by annealing the stack, wherein annealing is performed at a temperature in the range of 400-1100° C.

10 . The method according to claim 8 , wherein the emissive material has a conduction band at CBp eV and a valence band at VBp eV from the vacuum level, with CBp>VBp,
wherein the insulating layer has a conduction band at CBb eV and a valence band at VBb eV from the vacuum level, with CBb>VBb, wherein CBb>CBp and wherein VBb≦VBp+1.5 eV.

11 . The method according to claim 8 , wherein the semiconductor layer comprises an emissive material selected from the group consisting of ZnO, (Zn,Mg)O, ZnS, ZnSe, CdO, CdS, CdSe, and doped variants of any of these, and wherein the insulating layer is selected from the group consisting of SiO 2 , MgO, SrTiO 3 , ZrO 2 , HfO 2 , and Y 2 O 3 .

12 . The method according to claim 8 , wherein the semiconductor layer comprises an emissive material,
wherein the formation of the semiconductor layer comprises a deposition technique selected from the group consisting of pulsed laser deposition (PLD) and radio frequency (RF) sputtering, wherein the semiconductor layer has the nominal composition Zn 1-x Mg x O with 1-350 ppm Al, wherein x is in the range of 0<x≦0.3.

13 . The method according to claim 8 , wherein the semiconductor layer is polycrystalline.

14 . A method for the production of an aluminum doped zinc magnesium oxide, the method comprising:
providing a composition comprising Zn, Mg and Al having the nominal composition Zn 1-x Mg x O with 1-350 ppm Al, wherein x is in the range of 0<x≦0.3, and subsequently annealing the composition to provide said aluminum doped zinc magnesium oxide.

15 . The method according to claim 14 , further comprising heat treating the composition at elevated temperatures prior to said annealing the composition.

16 . The method according to claim 15 , wherein heat treating the composition comprises heat treating under oxidative conditions.

17 . The method according to claim 14 , wherein the composition is polycrystalline.

Assignees

• Koninklijke Philips Nv

Inventors

• Asadi Kamal
• De Leeuw Dagobert Michel
• Cillessen Johannes Franciscus Maria
• Keur Wilhelmus Cornelis
• Verbakel Frank
• Baesjou Patrick John
• Timmering Cornelis Eustatius

Classifications

• C09K11/643 Primary

  with alkaline earth metals · CPC title

• H05B33/14

  characterised by the chemical or physical composition or the arrangement of the electroluminescent material {, or by the simultaneous addition of the electroluminescent material in or onto the light source} · CPC title

• H10H20/8512

  Wavelength conversion materials · CPC title

• H10H20/032

  of electrodes · CPC title

• H10H20/8232

  characterised by the dopants · CPC title