Semiconductor light emitting device

Patent metadata

Field	Value
Publication number	US-2016190388-A1
Application number	US-201615063150-A
Country	US
Kind code	A1
Filing date	Mar 7, 2016
Priority date	Jan 9, 2014
Publication date	Jun 30, 2016
Grant date	—

Abstract

There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.

First claim

What is claimed is:

1 . A semiconductor light emitting device, comprising:
a first conductivity-type semiconductor base layer; a plurality of light emitting nanostructures disposed spaced apart from one another on a surface of the first conductivity-type semiconductor base layer and including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively; and first and second electrodes electrically connected to the first conductivity-type semiconductor base layer and the second conductivity-type semiconductor layer, respectively, wherein the electric charge blocking layer has different thicknesses on first and second crystal planes of the first conductivity-type semiconductor core and includes an impurity having a first concentration, the second conductivity-type semiconductor layer includes the impurity having a second concentration, and the first concentration is half or less of the second concentration.

2 . The semiconductor light emitting device of claim 1 , wherein the plurality of light emitting nanostructures extend downwardly from the first conductivity-type semiconductor base layer within the second electrode.

3 . The semiconductor light emitting device of claim 1 , wherein the second electrode includes:
a contact electrode layer configured to fill spaces between adjacent light emitting nanostructures and to cover the light emitting nanostructures; and a bonding electrode layer disposed on a bottom surface of the contact electrode layer.

4 . The semiconductor light emitting device of claim 1 , wherein a thickness of the electric charge blocking layer is less than a thickness of the second conductivity-type semiconductor layer.

5 . The semiconductor light emitting device of claim 1 , wherein the first concentration comprises an impurity concentration in a region of at least one of a first or a second crystal plane of the electric charge blocking layer.

6 . The semiconductor light emitting device of claim 1 , wherein the electric charge blocking layer has an impurity concentration greater in a region on the first crystal planes than in a region on the second crystal planes.

7 . The semiconductor light emitting device of claim 1 , wherein the electric charge blocking layer has a thickness greater on the first crystal planes than on the second crystal planes.

8 . The semiconductor light emitting device of claim 1 , wherein the impurity comprises a p-type impurity.

9 . The semiconductor light emitting device of claim 8 , wherein the impurity comprises magnesium (Mg).

10 . The semiconductor light emitting device of claim 1 , wherein the electric charge blocking layer includes AlGaN or AlInGaN.

11 . The semiconductor light emitting device of claim 1 , wherein the first crystal planes comprise non-polar planes, and the second crystal planes comprise polar planes or semi-polar planes.

12 . The semiconductor light emitting device of claim 11 , wherein the first crystal planes comprise m planes and the second crystal planes comprise r planes.

13 . The semiconductor light emitting device of claim 1 , wherein the plurality of light emitting nanostructures further include a transparent electrode layer positioned on the second conductivity-type semiconductor layer.

14 . The semiconductor light emitting device of claim 1 , further comprises a conductive substrate bonded to the second electrode.

15 . A semiconductor light emitting device, comprising:
a conductive substrate; a first conductivity-type semiconductor base layer having a first surface spaced apart from the conductive substrate and facing the conductive substrate and a second surface disposed opposite to the first surface; a plurality of light emitting nanostructures disposed spaced apart from one another on the first surface of the first conductivity-type semiconductor base layer and including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively; a first electrode disposed on the second surface of the first conductivity-type semiconductor base layer; and a second electrode disposed between the conductive substrate and the first conductivity-type semiconductor base layer.

16 . The semiconductor light emitting device of claim 15 , wherein each of the light emitting nanostructures includes a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, and
the second electrode electrically connects the second conductivity-type semiconductor layer with the conductive substrate.

17 . A light emitting device package, comprising:
a mounting board; and a semiconductor light emitting device mounted on the mounting board, the semiconductor light emitting device comprising: a first conductivity-type semiconductor base layer; a plurality of light emitting nanostructures disposed spaced apart from one another on a surface of the first conductivity-type semiconductor base layer and including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively; and first and second electrodes electrically connected to the first conductivity-type semiconductor base layer and the second conductivity-type semiconductor layer, respectively, wherein the electric charge blocking layer has different thicknesses on first and second crystal planes of the first conductivity-type semiconductor core and includes an impurity having a first concentration, the second conductivity-type semiconductor layer includes the impurity having a second concentration, and the first concentration is half or less of the second concentration.

18 . The light emitting device package of claim 17 , wherein the plurality of light emitting nanostructures extend downwardly from the first conductivity-type semiconductor base layer within the second electrode.

19 . The light emitting device package of claim 17 , further comprises a conductive substrate bonded to a bottom surface of the second electrode,
the second electrode is disposed between the conductive substrate and the first conductivity-type semiconductor base layer and filling spaces between the plurality of light emitting nanostructures.

20 . The light emitting device package of claim 17 , further comprising an encapsulant encapsulating the semiconductor light emitting device.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Jin Sub
• Kim Jung Sub
• Kang Sam Mook
• Seo Yeon Woo
• Seong Han Kyu
• Chun Dae Myung
• Choi Young Jin
• Heo Jae Hyeok

Classifications

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title