Light emitting device

Patent metadata

Field	Value
Publication number	US-9455371-B2
Application number	US-201514669241-A
Country	US
Kind code	B2
Filing date	Mar 26, 2015
Priority date	Jan 26, 2011
Publication date	Sep 27, 2016
Grant date	Sep 27, 2016

Abstract

Disclosed is a light emitting device including a substrate, a first conductive semiconductor layer disposed on the substrate, an active layer disposed on the first conductive semiconductor layer, and a second conductive semiconductor layer disposed on the active layer, wherein the first conductive semiconductor layer comprises a first layer provided at the upper surface thereof with a notch, a second layer disposed on the first layer and a third layer disposed on the second layer, wherein the first conductive semiconductor layer further comprises a blocking layer between the first layer and the second layer and the blocking layer is disposed along the notch. The light emitting device can reduce leakage current by dislocation and improve resistance to static electricity.

First claim

What is claimed is:

1. A light emitting device comprising:
a substrate;
a first conductive semiconductor layer disposed on the substrate;
an active layer disposed on the first conductive semiconductor layer; and
a second conductive semiconductor layer disposed on the active layer,
wherein the first conductive semiconductor layer comprises a first layer, a second layer disposed on the first layer and a third layer disposed on the second layer,
wherein the first, second and third layers include the same semiconductor material,
wherein a plurality of islands are disposed on at least one portion of the first layer, and
wherein the first layer is grown in a form of a column having an inclined plane between two adjacent islands among the plurality of islands.

2. The light emitting device according to claim 1 , wherein the island contains at least one of MgN, SiN, or ZnN.

3. The light emitting device according to claim 1 , wherein the second layer has an even surface.

4. The light emitting device according to claim 1 , wherein the second layer is un-doped layer.

5. The light emitting device according to claim 1 , wherein the second layer comprises a silicon (Si).

6. The light emitting device according to claim 1 , wherein the first layer and the third layer are doped with impurities.

7. The light emitting device according to claim 1 , wherein the first layer extends between two adjacent islands among the plurality of islands.

8. The light emitting device according to claim 1 , wherein the third layer is doped with an n-type dopant.

9. The light emitting device according to claim 1 , wherein a thickness of the third layer is 1,000 Å.

10. The light emitting device according to claim 1 , wherein a total thickness of the second layer and the third layer is 0.5-1 μm.

11. The light emitting device according to claim 1 , wherein when seen from the plane, the islands surround the first layer.

12. The light emitting device according to claim 1 , further comprising a light-transmitting electrode layer disposed on the second conductive semiconductor layer.

13. The light emitting device according to claim 1 , further comprising:
a first electrode electrically connected to the first conductive semiconductor layer; and
a second electrode disposed on the second conductive semiconductor layer.

14. The light emitting device according to claim 1 , further comprising a buffer layer disposed on the substrate.

15. The light emitting device according to claim 1 , further comprising an intermediate layer is disposed between the active layer and the second conductive layer.

16. The light emitting device according to claim 15 , wherein the intermediate layer has a larger band gap than the active layer.

17. The light emitting device according to claim 15 , wherein the intermediate layer contains AlGaN.

18. The light emitting device according to claim 1 , wherein the plurality of islands has an upper surface and a bottom surface and a width of the upper surface is narrower than the bottom surface.

19. The light emitting device according to claim 1 , wherein the plurality of islands has inclined surfaces.

20. The light emitting device according to claim 1 , wherein top surfaces of the plurality of islands are flat.

21. A light emitting device package comprising a light emitting device,
wherein the light emitting device comprises:
a substrate;
a first conductive semiconductor layer disposed on the substrate;
an active layer disposed on the first conductive semiconductor layer; and
a second conductive semiconductor layer disposed on the active layer,
wherein the first conductive semiconductor layer comprises a first layer including a plurality of islands, a second layer disposed on the first layer and a third layer disposed on the second layer,
wherein the first, second and third layers include the same semiconductor material, and
wherein the first layer is grown in a form of a column having an inclined plane between two adjacent islands among the plurality of islands.

22. A lighting device comprising a cover connected to a body and a light emitting device module comprising a light emitting device;
wherein the light emitting device module is connected to the upper surface of the body,
wherein the light emitting device comprises:
a substrate;
a first conductive semiconductor layer disposed on the substrate;
an active layer disposed on the first conductive semiconductor layer; and
a second conductive semiconductor layer disposed on the active layer,
wherein the first conductive semiconductor layer comprises a first layer including a plurality of islands, a second layer disposed on the first layer and a third layer disposed on the second layer,
wherein the first, second and third layers include the same semiconductor material, and
wherein the first layer is grown in a form of a column having an inclined plane between two adjacent islands among the plurality of islands.

Assignees

• Lg Innotek Co Ltd

Inventors

• Jeong Jongpil
• Lee Sanghyun
• Sim Sehwan
• Jung Sungyi

Classifications

• H10H20/84

  Coatings, e.g. passivation layers or antireflective coatings · CPC title

• H10H20/825

  containing nitrogen, e.g. GaN · CPC title

• H10H20/82

  Roughened surfaces, e.g. at the interface between epitaxial layers · CPC title

• H10H20/8162

  Current-blocking structures · CPC title

• H10H20/815 Primary

  having stress relaxation structures, e.g. buffer layers · CPC title