Light-emitting device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9312303-B2
Application number	US-201414204764-A
Country	US
Kind code	B2
Filing date	Mar 11, 2014
Priority date	Jun 14, 2012
Publication date	Apr 12, 2016
Grant date	Apr 12, 2016

Abstract

A method for manufacturing a light-emitting device comprises the steps of: providing a first substrate; forming a semiconductor structure on the first substrate, wherein the semiconductor structure comprises a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; forming an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; and injecting an electrical current with a current density to the second part to make the second part to be permanently broken-down; wherein after the second part is permanently broken-down, the first part is capable of generating electromagnetic radiation and the second part is incapable of generating electromagnetic radiation.

First claim

What is claimed is:

1. A method for manufacturing a light-emitting device comprising the steps of:
providing a first substrate;
forming a semiconductor structure on the first substrate, wherein the semiconductor structure comprises a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer;
forming an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; and
injecting an electrical current with a current density to the second part to exceed a breakdown voltage of the second part to cause the second part to function as a low-resistance resistor and lose its diode behavior;
wherein after the diode behavior of the second part is permanently destroyed, the active layer in the first part is capable of generating light and the active layer in the second part is incapable of generating light.

2. The method according to claim 1 , further comprising a step of separating the semiconductor structure from the first substrate.

3. The method according to claim 2 , further comprising a step of bonding the semiconductor structure to a second substrate.

4. The method according to claim 3 , further comprising a step of removing the first substrate after the step of bonding the semiconductor structure to the second substrate.

5. The method according to claim 3 , wherein the second substrate is conductive.

6. The method according to claim 3 , further comprising a step of forming a bonding layer on the second substrate for bonding to the semiconductor structure.

7. The method according to claim 3 , further comprising a step of forming a reflecting layer on the second substrate.

8. The method according to claim 2 , wherein the step of separating the semiconductor structure from the first substrate is before the step of forming the isolation region.

9. The method according to claim 1 , wherein the step of forming the isolation region comprises forming a trench.

10. The method according to claim 9 , wherein the step of forming a trench is performed by dry etching.

11. The method according to claim 9 , wherein the trench is formed through the first type semiconductor layer and the active layer and exposes the second type semiconductor layer.

12. The method according to claim 1 , wherein the electrical current simultaneously causes a reverse-bias to the second part and a forward-bias to the first part.

13. The method according to claim 1 , further comprising a step of forming a first electrode on the second part of the semiconductor structure and a second electrode on the first part of the semiconductor structure.

14. The method according to claim 1 , wherein the step of forming an isolation region is performed by ion implantation.

15. The method according to claim 1 , wherein the current density applied to the second part of the semiconductor structure is greater than 80 A/cm 2 .

16. The method according to claim 1 , wherein the second part comprises semiconductor material, and wherein the electrical current is substantially conducted through the semiconductor material.

17. The method according to claim 1 , wherein the second part has a resistance lower than that of the first part of the semiconductor structure after the diode behavior of the second part is permanently destroyed.

18. The method according to claim 1 , wherein in a normal operation, a current passing through the second part is in a direction different from a direction of a current passing through the first part.

Assignees

• Epistar Corp

Inventors

• Lee Rong-Ren
• Chen Cheng-Hong
• Ni Chih-Peng
• Lin Chun-Yu

Classifications

• H10D1/47

  Resistors having no potential barriers · CPC title

• H10H20/8215

  characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping · CPC title

• H10H20/819

  characterised by their shape, e.g. curved or truncated substrates · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/831

  characterised by their shape · CPC title