Reducing or eliminating nanopipe defects in III-nitride structures

Patent metadata

Field	Value
Publication number	US-9406836-B2
Application number	US-201314413233-A
Country	US
Kind code	B2
Filing date	Jul 3, 2013
Priority date	Jul 11, 2012
Publication date	Aug 2, 2016
Grant date	Aug 2, 2016

Abstract

Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.

First claim

The invention claimed is:

1. A device comprising:
a III-nitride light emitting layer disposed between an n-type region and a p-type region;
a III-nitride layer comprising GaN islands coalesced into a smooth film, and a nanopipe defect disposed at a boundary between two GaN islands; and
a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect, wherein the nanopipe terminates in the nanopipe terminating layer.

2. The device of claim 1 wherein the nanopipe terminating layer comprises aluminum.

3. The device of claim 2 wherein the nanopipe terminating layer contains magnesium.

4. The device of claim 1 wherein the nanopipe terminating layer comprises a superlattice, the superlattice comprising a plurality of alternating first and second layers.

5. The device of claim 4 wherein the first layers are GaN and the second layers are Al x Ga 1-x N where 0<x≦1.

6. The device of claim 4 wherein the first layers are Al b Ga 1-b N and the second layers are Al c Ga 1-c N, wherein b≠c.

7. The device of claim 1 wherein the III-nitride light emitting layer is spaced at least 1 micron from the nanopipe terminating layer.

8. The device of claim 1 wherein the nanopipe terminating layer is electrically connected in common with the n-type layer.

9. The device of claim 1 wherein the nanopipe terminating layer comprises part of an electrostatic discharge protection circuit.

Assignees

• Koninklijke Philips Nv

Inventors

• Grillot Patrick Nolan
• Wildeson Isaac Harshman
• Nshanian Tigran
• Deb Parijan Pramil

Classifications

• H10W72/5366

  the bond wires having kinks · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W90/00

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• H01S5/3086

  doping of the active layer · CPC title

• H01S5/32341

  blue laser based on GaN or GaP · CPC title