Bidirectional switch having back to back field effect transistors
US-2019393218-A1 · Dec 26, 2019 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L29/7828 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 108 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 15 |
| 2016 | 13 |
| 2017 | 12 |
| 2018 | 16 |
| 2019 | 15 |
| 2020 | 13 |
| 2021 | 12 |
| 2022 | 5 |
| 2023 | 1 |
| 2024 | 5 |
| 2025 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Semiconductor constructions which include metal-containing gate portions and semiconductor-containing gate portions
US-10497707-B2 · Dec 3, 2019 · US
Semiconductor Device with Silicon Carbide Body and Method of Manufacturing
US-2019355819-A1 · Nov 21, 2019 · US
Semiconductor device having junctionless vertical gate transistor and method of manufacturing the same
US-10361206-B2 · Jul 23, 2019 · US
Transistor and fabrication method thereof
US-2018330954-A1 · Nov 15, 2018 · US
Semiconductor device and method for manufacturing the same
US-2018315823-A1 · Nov 1, 2018 · US
Transistor structures having a deep recessed P+ junction and methods for making same
US-10115815-B2 · Oct 30, 2018 · US
Vertical three-dimensional semiconductor device and method of making same
US-10103159-B2 · Oct 16, 2018 · US
Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions
US-10103230-B2 · Oct 16, 2018 · US
Semiconductor device and method of fabricating the same
US-10096687-B2 · Oct 9, 2018 · US
Method for producing a semiconductor device including semiconductor pillar and fin
US-10056483-B2 · Aug 21, 2018 · US
Transistor and fabrication method thereof
US-10043671-B2 · Aug 7, 2018 · US
Semiconductor device
US-10002963-B2 · Jun 19, 2018 · US
Semiconductor device and method for manufacturing a semiconductor device
US-9941403-B2 · Apr 10, 2018 · US
Controlled Ion Implantation into Silicon Carbide Using Channeling and Devices Fabricated Using Controlled Ion Implantation into Silicon Carbide Using Channeling
US-2018069083-A1 · Mar 8, 2018 · US
Self-aligned slotted accumulation-mode field effect transistor (AccuFET) structure and method
US-9882049-B2 · Jan 30, 2018 · US
Integrating enhancement mode depleted accumulation/inversion channel devices with MOSFETs
US-9876096-B2 · Jan 23, 2018 · US
Semiconductor devices with depleted heterojunction current blocking regions
US-2018019302-A1 · Jan 18, 2018 · US
III-nitride transistor with trench gate
US-9865725-B2 · Jan 9, 2018 · US
Bidirectional switch having back to back field effect transistors
US-2018006026-A1 · Jan 4, 2018 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L29/7828?
- CPC H01L29/7828 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L29/7828 (Electricity)?
- Our database includes 108 publications tagged with this CPC code.
- Is patent activity under CPC H01L29/7828 growing?
- Publication counts under this code: 5 in 2024 vs 1 in 2025 (latest complete years).