Method for producing semiconductor device and semiconductor device
US-9768294-B2 · Sep 19, 2017 · US
Semiconductor device
US10002963B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10002963-B2 |
| Application number | US-201715672543-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 9, 2017 |
| Priority date | Apr 16, 2013 |
| Publication date | Jun 19, 2018 |
| Grant date | Jun 19, 2018 |
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- Title
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Abstract
Official abstract text for this publication.
A semiconductor device includes a fin-shaped semiconductor layer, a first insulating film around the fin-shaped semiconductor layer, and a first metal film around the first insulating film. A pillar-shaped semiconductor layer is on the fin-shaped semiconductor layer, and a gate insulating film is around the pillar-shaped semiconductor layer. A gate electrode is around the gate insulating film and is made of a third metal. A gate line is connected to the gate electrode, and an upper portion of the fin-shaped semiconductor layer and the first metal film are electrically connected to each other.
First claim
Opening claim text (preview).
The invention claimed is: 1. A semiconductor device comprising: a fin-shaped semiconductor layer on a substrate; a first insulating film around the fin-shaped semiconductor layer; a first metal film around the first insulating film; a pillar-shaped semiconductor layer on the fin-shaped semiconductor layer; a gate insulating film around the pillar-shaped semiconductor layer; a gate electrode around the gate insulating film and made of a third metal; a gate line connected to the gate electrode; wherein an upper portion of the fin-shaped semiconductor layer and the first metal film are electrically connected to each other. 2. The semiconductor device according to claim 1 , wherein the fin-shaped and pillar-shaped semiconductor layers are made of silicon. 3. The semiconductor device according to claim 2 , wherein the first metal film has a work function of 4.0 eV to 4.2 eV. 4. The semiconductor device according to claim 2 , wherein the first metal film has a work function of 5.0 eV to 5.2 eV. 5. The semiconductor device according to claim 1 , wherein the pillar-shaped semiconductor layer has a width equal to a length of a short side of the fin-shaped semiconductor layer.
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Classifications
Chemical etching · CPC title
by chemical means · CPC title
by chemical means · CPC title
Structure · CPC title
being Group IVA materials · CPC title
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Frequently asked questions
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- What does patent US10002963B2 cover?
- A semiconductor device includes a fin-shaped semiconductor layer, a first insulating film around the fin-shaped semiconductor layer, and a first metal film around the first insulating film. A pillar-shaped semiconductor layer is on the fin-shaped semiconductor layer, and a gate insulating film is around the pillar-shaped semiconductor layer. A gate electrode is around the gate insulating film a…
- Who is the assignee on this patent?
- Unisantis Elect Singapore Pte
- What technology area does this patent fall under?
- Primary CPC classification H01L29/7827. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 19 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).