High yield substrate assembly
US-10748858-B2 · Aug 18, 2020 · US
Electricity
Electricity · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H01L21/02392 |
| Official title | — |
| Display label | Electricity (mapped technology topic) |
| Total patents | 104 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is rapidly declining.
| Year | Patents |
|---|---|
| 2015 | 7 |
| 2016 | 11 |
| 2017 | 11 |
| 2018 | 13 |
| 2019 | 12 |
| 2020 | 9 |
| 2021 | 9 |
| 2022 | 9 |
| 2023 | 16 |
| 2024 | 5 |
| 2025 | 1 |
| 2026 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
High percentage silicon germanium graded buffer layers with lattice matched Ga(As1-yPy) interlayers
US-10741387-B1 · Aug 11, 2020 · US
Vapor phase growth device, and epi wafer producing method
US-2020165744-A1 · May 28, 2020 · US
Indium phosphide substrate, method of inspecting indium phosphide substrate, and method of producing indium phosphide substrate
US-10663277-B2 · May 26, 2020 · US
Preparation of compound semiconductor substrate for epitaxial growth via non-destructive epitaxial lift-off
US-2020111667-A1 · Apr 9, 2020 · US
Charge carrier transport facilitated by strain
US-10529855-B2 · Jan 7, 2020 · US
Charge carrier transport facilitated by strain
US-2019378929-A1 · Dec 12, 2019 · US
Semiconductor device including strained germanium and method for manufacturing the same
US-10504771-B2 · Dec 10, 2019 · US
Substrate including photonic crystal and method for manufacturing the same, and surface emitting quantum cascade laser
US-10490979-B2 · Nov 26, 2019 · US
Indium phosphide substrate, method of inspecting indium phosphide substrate, and method of producing indium phosphide substrate
US-10473445-B2 · Nov 12, 2019 · US
LIGHT EMITTING DIODE WITH ZnO EMITTER
US-2019341528-A1 · Nov 7, 2019 · US
High yield substrate assembly
US-2019341361-A1 · Nov 7, 2019 · US
Light emitting diode with ZnO emitter
US-10439106-B2 · Oct 8, 2019 · US
High yield substrate assembly
US-10396041-B2 · Aug 27, 2019 · US
Nanowire bundle and method of manufacturing nanostructure
US-10354869-B2 · Jul 16, 2019 · US
Heterogeneous integration of 3D SI and III-V vertical nanowire structures for mixed signal circuits fabrication
US-10319642-B2 · Jun 11, 2019 · US
Method for fabricating InGaP epitaxial layer by metal organic chemical vapor deposition (MOCVD)
US-10304678-B1 · May 28, 2019 · US
Epitaxial growth of defect-free, wafer-scale single-layer graphene on thin films of cobalt
US-2019139762-A1 · May 9, 2019 · US
Reducing Autodoping of III-V Semiconductors By Atomic Layer Epitaxy (ALE)
US-2018342392-A1 · Nov 29, 2018 · US
Compound semiconductor device and method of manufacturing the compound semiconductor device
US-10134889-B2 · Nov 20, 2018 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H01L21/02392?
- CPC H01L21/02392 is the Cooperative Patent Classification code for “Electricity.”
- How many patents are filed under CPC H01L21/02392 (Electricity)?
- Our database includes 104 publications tagged with this CPC code.
- Is patent activity under CPC H01L21/02392 growing?
- Publication counts under this code: 5 in 2024 vs 1 in 2025 (latest complete years).