Method for fabricating InGaP epitaxial layer by metal organic chemical vapor deposition (MOCVD)

Patent metadata

Field	Value
Publication number	US-10304678-B1
Application number	US-201815924775-A
Country	US
Kind code	B1
Filing date	Mar 19, 2018
Priority date	Nov 24, 2017
Publication date	May 28, 2019
Grant date	May 28, 2019

Abstract

The present invention provides a method for fabricating an InGaP epitaxial layer by metal organic chemical vapor deposition (MOCVD). The method comprises: placing a silicon substrate in a reaction chamber; arranging the reaction chamber to have a first chamber temperature, and growing a first GaP layer with a first thickness on the Si substrate at the first chamber temperature; arranging the reaction chamber to have a second chamber temperature, and growing a second GaP layer with a second thickness on the first GaP layer at the second chamber temperature; arranging the reaction chamber to have a third chamber temperature for a first time interval, and then arranging the reaction chamber to have a fourth chamber temperature for a second time interval; and growing a multi-layered InGaP layer on the second GaP layer.

First claim

What is claimed is:

1. A method for fabricating an InGaP epitaxial layer by metal organic chemical vapor deposition (MOCVD), comprising the steps of:
(A) placing a silicon substrate in a reaction chamber;
(B) arranging the reaction chamber to have a first chamber temperature, and growing a first GaP layer with a first thickness on the Si substrate at the first chamber temperature;
(C) arranging the reaction chamber to have a second chamber temperature, and growing a second GaP layer with a second thickness on the first GaP layer at the second chamber temperature, where the second chamber temperature is at least 200° C. higher than the first chamber temperature and the second thickness is 80-180 times of the first thickness;
(D) arranging the reaction chamber to have a third chamber temperature for a first time interval, and then arranging the reaction chamber to have a fourth chamber temperature for a second time interval, in which the fourth chamber temperature is higher than the second chamber temperature, the third chamber temperature is at least 0.5 time of the fourth chamber temperature, and the second time interval is at least 8 times of the first time interval; and
(E) growing a multi-layered InGaP layer on the second GaP layer,
wherein the third chamber temperature is 390-420° C., the first time interval is 25-35 sec, the fourth chamber temperature is 780-840° C., the second time interval is 5-10 min, and the temperature of the reaction chamber is adjusted from the third chamber temperature to the fourth chamber temperature at a ramping rate of 0.8-1.2° C./sec.

2. The method for fabricating an InGaP epitaxial layer by MOCVD according to claim 1 , wherein the first chamber temperature is 420-450° C., and the step (B) comprises:
introducing a phosphorus (P)-containing gas and a gallium (Ga)-containing gas to the reaction chamber, wherein the ratio of the elements phosphorus to gallium is 10-30, and the reaction chamber is arranged to have a pressure of 40-60 mbar.

3. The method for fabricating an InGaP epitaxial layer by MOCVD according to claim 1 , wherein the second chamber temperature is 650-680° C., and the step (C) comprises:
introducing the phosphorus-containing gas and the gallium-containing gas to the reaction chamber, wherein the ratio of the elements phosphorus to gallium is 30-50, and the reaction chamber is arranged to have a pressure of 40-60 mbar.

4. The method for fabricating an InGaP epitaxial layer by MOCVD according to claim 1 , wherein the step (D) is repeated 2-4 times.

5. The method for fabricating an InGaP epitaxial layer by MOCVD according to claim 1 , wherein the step (E) comprises:
(E1) arranging the reaction chamber to have a fifth chamber temperature, and introducing the phosphorus-containing gas, an indium-containing gas, and the gallium-containing gas to the reaction chamber, wherein the ratio of the elements phosphorus to indium and gallium is a first ratio, to grow a stepped layer; and
(E2) gradually elevating the temperature of the reaction chamber from the fifth chamber temperature to a sixth chamber temperature, and at the same time, gradually reducing the ratio of the elements phosphorus to indium and gallium in the introduced gases from the first ratio to a second ratio, to grow a linear layer.

6. The method for fabricating an InGaP epitaxial layer by MOCVD according to claim 5 , wherein the fifth chamber temperature is 610-640° C.

7. The method for fabricating an InGaP epitaxial layer by MOCVD according to claim 5 , wherein the first ratio is 64-68.

8. The method for fabricating an InGaP epitaxial layer by MOCVD according to claim 5 , wherein in the step (E), the pressure in the reaction chamber is 50 mbar.

9. The method for fabricating an InGaP epitaxial layer by MOCVD according to claim 5 , wherein the steps (E1) and (E2) are repeated 4-6 times, to form an InGaP layer having a plurality of stepped layers and a plurality of linear layers stacked alternately, wherein a preceding sixth chamber temperature is used as a following fifth chamber temperature, and a preceding second ratio is used as a following first ratio.

10. The method for fabricating an InGaP epitaxial layer by MOCVD according to claim 9 , wherein the fifth chamber temperature is 610-640° C.

11. The method for fabricating an InGaP epitaxial layer by MOCVD according to claim 9 , wherein the first ratio is 64-68.

12. The method for fabricating an InGaP epitaxial layer by MOCVD according to claim 9 , wherein in the step (E), the pressure in the reaction chamber is 50 mbar.

Assignees

• Iner Aec Executive Yuan

Inventors

• Huang Wen-Hsiang
• Wu Chih-Hung
• Hong Hwen-Fen

Classifications

• H10P14/3254

  Graded layers · CPC title

• H10P14/3251

  consisting of three or more layers · CPC title

• H10P14/3218

  Phosphides · CPC title

• H10P14/2909

  Phosphides · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title