Substrate including photonic crystal and method for manufacturing the same, and surface emitting quantum cascade laser

Patent metadata

Field	Value
Publication number	US-10490979-B2
Application number	US-201715855413-A
Country	US
Kind code	B2
Filing date	Dec 27, 2017
Priority date	Dec 27, 2017
Publication date	Nov 26, 2019
Grant date	Nov 26, 2019

Abstract

A substrate including a photonic crystal has a compound semiconductor, dielectric layers, and a first semiconductor layer. The dielectric layers are provided on a surface of the compound semiconductor substrate and disposed at each grating point of a two-dimensional diffraction grating, each of the dielectric layers having an asymmetric shape in relation to at least one edge of the two-dimensional diffraction grating and having a refractive index lower than a refractive index of the compound semiconductor substrate. The first semiconductor layer includes a flat first face covering the dielectric layers and the surface of the compound semiconductor substrate, a layer constituting the first face containing a material capable of being lattice matched to a material constituting the compound semiconductor substrate.

First claim

What is claimed is:

1. A method for manufacturing a substrate on which a semiconductor stacked body including an active layer of a quantum cascade laser is regrown, the method comprising:
on a surface of a compound semiconductor substrate, forming a dielectric film including a nitride film or an oxide film and having a refractive index lower than the refractive index of the compound semiconductor substrate;
patterning the dielectric film and forming dielectric layers constituting grating points of a two-dimensional diffraction grating, such that each of the dielectric layers has an asymmetric shape in relation to at least one edge of the two-dimensional diffraction grating;
on the surface of the compound semiconductor substrate and on the dielectric layers, growing a first semiconductor layer having a flat surface, such that a deviation of lattice constant of the first semiconductor layer is within ±1% to a lattice constant of a material of the compound semiconductor substrate, and
flattening the first semiconductor layer by chemical and mechanical polishing process, such that a further flattened surface is made to be a regrowth starting surface of the semiconductor stacked body.

2. The method according to claim 1 , wherein the first semiconductor layer includes a region having a silicon concentration increasing toward the dielectric layers.

3. The method according to claim 1 , wherein the material of the compound semiconductor substrate is the same as the material of the layer constituting the of the first semiconductor layer.

4. The method according to claim 1 , wherein the compound semiconductor substrate contains InP, and the first semiconductor layer contains InP or InGaAs.

Assignees

• Toshiba Kk

Inventors

• Hashimoto Rei
• Saito Shinji
• Kakuno Tsutomu
• Kaneko Kei
• Kai Yasunobu
• Okada Naotada

Classifications

• H10P14/3421

  Arsenides · CPC title

• H10P14/3418

  Phosphides · CPC title

• H10P14/3256

  Microstructure · CPC title

• H10P14/3238

  being insulating materials · CPC title

• H10P14/3221

  Arsenides · CPC title