Light emitting diode with ZnO emitter

Patent metadata

Field	Value
Publication number	US-10439106-B2
Application number	US-201514788018-A
Country	US
Kind code	B2
Filing date	Jun 30, 2015
Priority date	Jun 30, 2015
Publication date	Oct 8, 2019
Grant date	Oct 8, 2019

Abstract

A light emitting diode (LED) includes a p-type ohmic contact and a p-type substrate in contact with the p-type ohmic contact. A p-type confinement layer is provided on the p-type substrate. An emission layer is provided on the p-type confinement layer. An n-type confinement layer is provided on the emission layer. A transparent II-VI n-type contact layer is formed on the n-type confinement layer as a replacement for a current spreading layer, a III-V contact layer and an n-type ohmic contact.

First claim

The invention claimed is:

1. A red light emitting diode (LED), comprising:
a p-type monocrystalline III-V substrate;
a p-type ohmic contact formed directly on the substrate on a first side;
a p-type AlInP confinement layer formed directly on a second side of the substrate opposite the first side;
an emission layer formed on the p-type confinement layer and including GaInP for producing red light when activated;
an n-type AlInP confinement layer on the emission layer, the n-type and p-type confinement layers being symmetrically disposed relative to the emission layer; and
an amorphous zinc oxide (ZnO) contact layer with a thickness between about 200 and about 700 nm formed directly on the n-type confinement layer, wherein the n-type confinement layer and the p-type confinement layer include a same thickness dimension and base material, and the amorphous ZnO contact layer is configured to function as all of a current spreading layer, a III-V contact layer and an n-type ohmic contact.

2. The LED as recited in claim 1 , wherein the ZnO is Al doped.

3. A red light emitting diode (LED), comprising:
a p-type ohmic contact;
a GaAs p-doped substrate on the p-type ohmic contact;
an AlInP p-type confinement layer with a thickness of about 1 micron on the GaAs p-doped substrate;
an AlGaInP emission layer on the AlInP p-type confinement layer with a thickness of about 0.5 microns;
an AlInP n-type confinement layer with a thickness of about 1 micron on the AlGaInP emission layer;
an amorphous zinc oxide (ZnO) contact layer formed directly on the AlInP n-type confinement layer, wherein the amorphous ZnO contact layer has a thickness between about 200 nm and about 700 nm and is configured to function as all of a current spreading layer, a III-V contact layer and an n-type ohmic contact.

Assignees

• IBM

Inventors

• Fogel Keith E
• Kim Jeehwan
• Li Ning
• Sadana Devendra K

Classifications

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P14/2909

  Phosphides · CPC title

• H01L21/02554

  Electricity · mapped topic

• H01L33/40

  Electricity · mapped topic