Semiconductor device including a superlattice and enriched silicon 28 epitaxial layer

Patent metadata

Field	Value
Publication number	US-12477798-B2
Application number	US-202418428972-A
Country	US
Kind code	B2
Filing date	Jan 31, 2024
Priority date	Apr 21, 2021
Publication date	Nov 18, 2025
Grant date	Nov 18, 2025

Abstract

A semiconductor device may include a first single crystal silicon layer having a first percentage of silicon 28 ; a second single crystal silicon layer having a second percentage of silicon 28 higher than the first percentage of silicon 28 ; and a superlattice between the first and second single crystal silicon layers. The superlattice may include stacked groups of layers, with each group of layers including stacked base silicon monolayers defining a base silicon portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base silicon portions.

First claim

That which is claimed is:

1 . A semiconductor device comprising:
a first single crystal silicon layer having a first percentage of silicon 28 less than 93 percent; a second single crystal silicon layer having a second percentage of silicon 28 greater than 95 percent; at least one quantum bit device associated with the second single crystal silicon layer; and a superlattice below the at least one quantum bit device, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base silicon portions.

2 . The semiconductor device of claim 1 , wherein the at least one quantum bit device comprises an insulating layer on the second single crystal silicon layer, and a gate electrode on the insulating layer defining a hole or electron isolation area beneath the gate electrode in the second single crystal silicon layer.

3 . The semiconductor device of claim 1 , wherein the non-semiconductor monolayer comprises oxygen.

4 . The semiconductor device of claim 1 , wherein the superlattice is between the first and second single crystal silicon layers.

5 . The semiconductor device of claim 1 , wherein the second percentage of silicon 28 is greater than 99 percent.

6 . A semiconductor device comprising:
a first single crystal silicon layer having a first percentage of silicon 28 less than 93 percent; a second single crystal silicon layer having a second percentage of silicon 28 greater than 99 percent; at least one quantum bit device associated with the second single crystal silicon layer; and a superlattice below the at least one quantum bit device, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions.

7 . The semiconductor device of claim 6 , wherein the at least one quantum bit device comprises an insulating layer on the second single crystal silicon layer, and a gate electrode on the insulating layer defining a hole or electron isolation area beneath the gate electrode in the second single crystal silicon layer.

8 . The semiconductor device of claim 6 , wherein the superlattice is between the first and second single crystal silicon layers.

Assignees

• Atomera Inc

Inventors

• Hytha Marek
• Weeks Keith Doran
• Cody Nyles Wynn
• Takeuchi Hideki

Classifications

• H10D30/751

  having composition variations in the channel regions · CPC title

• H10D30/60

  Insulated-gate field-effect transistors [IGFET] (H10D30/40 takes precedence) · CPC title

• H10D48/383

  Quantum effect devices, e.g. of devices using quantum reflection, diffraction or interference effects · CPC title

• H10D62/83

  being Group IV materials, e.g. B-doped Si or undoped Ge · CPC title

• H10D62/364

  of IGFETs · CPC title