Wafer shape control for W2W bonding

Patent metadata

Field	Value
Publication number	US-12374562-B2
Application number	US-202217885097-A
Country	US
Kind code	B2
Filing date	Aug 10, 2022
Priority date	Apr 8, 2022
Publication date	Jul 29, 2025
Grant date	Jul 29, 2025

Abstract

A method, for bonding a first wafer to a second wafer, includes generating a first modification map based on wafer shape data of the first wafer and the second wafer. The first modification map defines adjustments to internal stresses of the first wafer. A first wafer shape of the first wafer is modified by forming a first stressor film on the first wafer based on the first modification map. The first wafer is aligned with the second wafer after the modifying. The first wafer is bonded to the second wafer.

First claim

What is claimed is:

1. A method for bonding a first wafer to a second wafer, the method comprising:
generating a first modification map, which defines adjustments to internal stresses of the first wafer, based on wafer shape data of the first wafer and the second wafer;
modifying a first wafer shape of the first wafer by forming a first stressor film on the first wafer based on the first modification map;
aligning the first wafer with the second wafer after the modifying; and
bonding the first wafer to the second wafer.

2. The method of claim 1 , wherein the modifying the first wafer shape of the first wafer further comprises modifying the first stressor film based on the first modification map.

3. The method of claim 2 , wherein the modifying the first stressor film comprises exposing the first stressor film to a pattern of electromagnetic radiation based on the first modification map.

4. The method of claim 3 , further comprising developing a photoresist layer of the first stressor film to form a relief pattern.

5. The method of claim 4 , further comprising etching a shape control layer of the first stressor film using the relief pattern as an etching mask.

6. The method of claim 3 , wherein the first stressor film is exposed to the pattern of electromagnetic radiation by direct-write.

7. The method of claim 2 , wherein the modifying the first stressor film comprises applying heat to the first stressor film.

8. The method of claim 7 , wherein the heat is applied to the first stressor film using a heat array with heat zones having independent temperature control.

9. The method of claim 8 , further comprising flowing a respective current through each resistor of the heat array so that each resistor generates a respective amount of heat.

10. The method of claim 7 , wherein the heat is applied to the first stressor film using a laser system that is configured to heat at least one of the first wafer or a wafer chuck that is configured to hold the first wafer.

11. The method of claim 2 , wherein the modifying the first stressor film comprises implanting ions into the first stressor film.

12. The method of claim 1 , further comprising keeping the first stressor film unmodified between the forming the first stressor film and the aligning the first wafer with the second wafer.

13. The method of claim 11 , wherein the forming the first stressor film comprises forming the first stressor film as a blanket film.

14. The method of claim 1 , wherein:
the first wafer has a front side working surface and a backside surface opposite the front side working surface, and
the first stressor film is formed on the backside of the first wafer.

15. The method of claim 1 , further comprising:
generating a second modification map, which defines adjustments to internal stresses of the second wafer, based on the wafer shape data of the first wafer and the second wafer; and
modifying a second wafer shape of the second wafer by forming a second stressor film on the second wafer based on the second modification map.

16. The method of claim 15 , wherein the modifying the second wafer shape of the second wafer further comprises modifying the second stressor film based on the second modification map.

17. The method of claim 1 , further comprising measuring the wafer shape data of the first wafer and the second wafer using one or more metrology tools.

18. The method of claim 17 , wherein the measuring the wafer shape data comprises measuring relative z-height values of the first wafer and the second wafer by bow measurement.

19. The method of claim 1 , wherein the first modification map is generated based on historic data in addition to the wafer shape data of the first wafer and the second wafer, the historic data including overlay information of historic wafers.

20. A method for bonding a first wafer to a second wafer, the method comprising:
receiving wafer shape data of the first wafer and the second wafer from one or more metrology tools;
generating a first modification map and a second modification map based on the wafer shape data of the first wafer and the second wafer, wherein the first modification map defines adjustments to internal stresses of the first wafer, and the second modification map defines adjustments to internal stresses of the second wafer;
modifying a first wafer shape of the first wafer by forming a first stressor film on the first wafer based on the first modification map;
modifying a second wafer shape of the second wafer by forming a second stressor film on the second wafer based on the second modification map;
aligning the first wafer with the second wafer after the modifying the first wafer shape and after the modifying the second wafer shape; and
bonding the first wafer to the second wafer.

Assignees

• Tokyo Electron Ltd

Inventors

• Schepis Anthony R
• Weloth Andrew
• Conklin David C
• Devilliers Anton J

Classifications

• H10W80/312

  characterised by the direct bonding of electrically conductive pads · CPC title

• H10W80/327

  characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers · CPC title

• H10W90/792

  between multiple chips · CPC title

• H10P74/277

  Circuits for electrically characterising or monitoring manufacturing processes, e.g. circuits in tested chips or circuits in testing wafers · CPC title

• H10P74/23

  characterised by multiple measurements, corrections, marking or sorting processes · CPC title