Warpage reduction in structures with electrical circuitry

Patent metadata

Field	Value
Publication number	US-9853000-B2
Application number	US-201615181861-A
Country	US
Kind code	B2
Filing date	Jun 14, 2016
Priority date	Dec 3, 2013
Publication date	Dec 26, 2017
Grant date	Dec 26, 2017

Abstract

To reduce warpage in at least one area of a wafer, a stress/warpage management layer ( 810 ) is formed to over-balance and change the direction of the existing warpage. For example, if the middle of the area was bulging up relative to the area's boundary, the middle of the area may become bulging downward, or vice versa. Then the stress/warpage management layer is processed to reduce the over-balancing. For example, the stress/management layer can be debonded from the wafer at selected locations, or recesses can be formed in the layer, or phase changes can be induced in the layer. In other embodiments, this layer is tantalum-aluminum that may or may not over-balance the warpage; this layer is believed to reduce warpage due to crystal-phase-dependent stresses which dynamically adjust to temperature changes so as to reduce the warpage (possibly keeping the wafer flat through thermal cycling). Other features are also provided.

First claim

The invention claimed is:

1. A structure comprising:
an integrated circuit; and
a first layer covering a first area of the integrated circuit and not being part of any circuitry, the first layer being bonded to the entire first area except at one or more selected locations within the first area, the first layer reducing a warpage of the integrated circuit in the first area and being sufficient to over-balance the warpage of the first area if bonded to the entire first area.

2. The structure of claim 1 wherein the first layer over-balances the warpage of the first area.

3. The structure of claim 1 wherein at any location at which the first layer is bonded to the first area, the first layer is debondable from the first area by electromagnetic radiation without debonding the first layer from the first area at any other location at which the first layer is bonded to the first area.

4. The structure of claim 1 wherein at any location at which the first layer is bonded to the first area, the first layer is debondable from the first area by heat without debonding the first layer from the first area at any other location at which the first layer is bonded to the first area.

5. The structure of claim 1 wherein the first layer comprises a first sub-layer and a second sub-layer;
wherein at each location at which the first layer is bonded to the first area, the second sub-layer comprises an adhesive bonding the first layer to the first area and having a different composition than the first sub-layer; and
at each location at which the first layer is not bonded to the first area, the second sub-layer comprises a composition obtainable from the adhesive by application of electromagnetic radiation.

6. The structure of claim 5 wherein the first layer is present in the final structure.

7. The structure of claim 1 wherein the first layer comprises a first sub-layer and a second sub-layer;
wherein at each location at which the first layer is bonded to the first area, the second sub-layer comprises an adhesive bonding the first layer to the first area and having a different composition than the first sub-layer; and
at each location at which the first layer is not bonded to the first area, the second sub-layer comprises a composition obtainable from the adhesive by application of heat.

8. The structure of claim 1 wherein:
at each location at which the first layer is bonded to the first area, the first layer comprises an adhesive bonded to the first area, the adhesive being debondable by application of electromagnetic radiation; and
at each location at which the first layer is not bonded to the first area, the first layer comprises a composition obtainable from the adhesive by application of electromagnetic radiation.

9. The structure of claim 1 wherein:
at each location at which the first layer is bonded to the first area, the first layer comprises an adhesive bonded to the first area, the adhesive being debondable by application of heat; and
at each location at which the first layer is not bonded to the first area, the first layer comprises a composition obtainable from the adhesive by application of heat.

10. The structure of claim 1 wherein the first area is an entire area of the integrated circuit.

11. The structure of claim 1 wherein the first layer is present in the final structure.

12. An assembly comprising:
an integrated circuit comprising one or more contact pads on a first side of the integrated circuit;
circuitry connected to the one or more contact pads of the integrated circuit; and
a first layer covering a first area on a second side of the integrated circuit, the first layer not being part of any circuitry, the first layer being bonded to the entire first area except at one or more selected locations within the first area, the first layer reducing a warpage of the first area.

13. The structure of claim 12 wherein at any location at which the first layer is bonded to the first area, the first layer is debondable from the first area by electromagnetic radiation without debonding the first layer from the first area at any other location at which the first layer is bonded to the first area.

14. The structure of claim 12 wherein at any location at which the first layer is bonded to the first area, the first layer is debondable from the first area by heat without debonding the first layer from the first area at any other location at which the first layer is bonded to the first area.

15. The structure of claim 12 wherein the first layer comprises a first sub-layer and a second sub-layer;
wherein at each location at which the first layer is bonded to the first area, the second sub-layer comprises an adhesive bonding the first layer to the first area and having a different composition than the first sub-layer; and
at each location at which the first layer is not bonded to the first area, the second sub-layer comprises a composition obtainable from the adhesive by application of electromagnetic radiation.

16. The structure of claim 12 wherein the first layer comprises a first sub-layer and a second sub-layer;
wherein at each location at which the first layer is bonded to the first area, the second sub-layer comprises an adhesive bonding the first layer to the first area and having a different composition than the first sub-layer; and
at each location at which the first layer is not bonded to the first area, the second sub-layer comprises a composition obtainable from the adhesive by application of heat.

17. The structure of claim 12 wherein:
at each location at which the first layer is bonded to the first area, the first layer comprises an adhesive bonded to the first area, the adhesive being debondable by application of electromagnetic radiation; and
at each location at which the first layer is not bonded to the first area, the first layer comprises a composition obtainable from the adhesive by application of electromagnetic radiation.

18. The structure of claim 12 wherein:
at each location at which the first layer is bonded to the first area, the first layer comprises an adhesive bonded to the first area, the adhesive being debondable by application of heat; and
at each location at which the first layer is not bonded to the first area, the first layer comprises a composition obtainable from the adhesive by application of heat.

19. The structure of claim 12 wherein the first area is an entire area of the integrated circuit.

20. The structure of claim 12 wherein the first layer is present in the final structure.

Assignees

• Invensas Corp

Inventors

• Uzoh Cyprian Emeka

Classifications

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P54/00

  Cutting or separating of wafers, substrates or parts of devices · CPC title

• H10P14/412

  Deposition of metallic or metal-silicide materials · CPC title

• H10W72/01938

  in gaseous form, e.g. by CVD or PVD · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title