Method for fabricating three-dimensional semiconductor device using buried stop layer in substrate
US-2024268119-A1 · Aug 8, 2024 · US
US2018047699A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2018047699-A1 |
| Application number | US-201715670072-A |
| Country | US |
| Kind code | A1 |
| Filing date | Aug 7, 2017 |
| Priority date | Aug 9, 2016 |
| Publication date | Feb 15, 2018 |
| Grant date | — |
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Deformation of substrates after the substrates are bonded can be suppressed. A bonding apparatus includes a first holding unit configured to attract and hold a first substrate from above; a second holding unit provided under the first holding unit and configured to attract and hold a second substrate from below; and a striker configured to press a central portion of the first substrate from above and bring the first substrate into contact with the second substrate. The first holding unit is configured to attract and hold a partial region of a peripheral portion of the first substrate, and the first holding unit attracts and holds the region which intersects with a direction, among directions from the central portion of the first substrate toward the peripheral portion thereof, in which a bonding region between the first substrate and the second substrate is expanded fastest.
Opening claim text (preview).
We claim: 1 . A bonding apparatus, comprising: a first holding unit configured to attract and hold a first substrate from above; a second holding unit provided under the first holding unit and configured to attract and hold a second substrate from below; and a striker configured to press a central portion of the first substrate from above and bring the first substrate into contact with the second substrate, wherein the first holding unit is configured to attract and hold a…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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