Method of manufacturing a semiconductor package

Patent metadata

Field	Value
Publication number	US-11848301-B2
Application number	US-202318128449-A
Country	US
Kind code	B2
Filing date	Mar 30, 2023
Priority date	Sep 27, 2019
Publication date	Dec 19, 2023
Grant date	Dec 19, 2023

Abstract

A bonding head for a die bonding apparatus and a die bonding apparatus including the bonding head, the bonding head including a head body; a thermal pressurizer mounted on a lower surface of the head body, the thermal pressurizer being configured to hold and heat at least one die and including a heater having a first heating surface that faces a held surface of the die; and a thermal compensator at an outer region of the die, the thermal compensator extending downwardly from the lower surface of the head body and including at least one thermal compensating block having a second heating surface that emits heat from a heating source therein and that faces a side surface of the die held on the thermal pressurizer.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor package, the method comprising:
holding a first die, using a bonding head of a die bonding apparatus, the bonding head including:
a head body;
a thermal pressurizer mounted on a lower surface of the head body, configured to hold at least one die and including a heater having a first heating surface that faces a held surface of the at least one die; and
a thermal compensator at an outer region of the at least one die, the thermal compensator extending downwardly from the lower surface of the head body and including at least one thermal compensating block having a second heating surface that faces a side surface of the at least one die held on the thermal pressurizer;

placing the first die on a second die;
heating and thermally pressurizing the first die on the second die, using the thermal pressurizer; and
reflecting heat emitted from the side surface of the first die again to the first die, using the at least one thermal compensating block.

2. The method of claim 1 , wherein the at least one thermal compensating block extends to surround a corner portion of the first die.

3. The method of claim 1 , wherein the at least one thermal compensating block extends to completely surround the at least one die.

4. The method of claim 1 , wherein the at least one thermal compensating block includes a thermal insulating material.

5. The method of claim 1 , further comprising forming bumps on bonding pads of the first die prior to holding the first die.

6. The method of claim 5 , wherein heating and thermally pressurizing the first die on the second die includes reflowing the bumps to form conductive bumps between the first die and the second die.

7. The method of claim 1 , further comprising coating an adhesive film on the second die prior to placing the first die on the second die.

8. The method of claim 1 , further comprising bonding a third die on the first die, using the bonding head.

9. The method of claim 1 , wherein the at least one compensating block includes a heating source therein.

10. The method of claim 1 , wherein the thermal at least one compensating block includes a plurality of stacked blocks.

11. A method of manufacturing a semiconductor package, the method comprising:
forming bumps on bonding pads of a first die;
coating an adhesive film on a second die; and
holding and bonding the first die on the second die using a bonding head of a die bonding apparatus,
wherein the bonding head includes:
a head body;
a thermal pressurizer mounted on a lower surface of the head body, the thermal pressurizer being configured to hold at least one die and including a heater having a first heating surface that faces a held surface of the at least one die; and
a thermal compensator at an outer region of the at least one die, the thermal compensator extending downwardly from the lower surface of the head body and including at least one thermal compensating block having a heat reflective surface that reflects heat from the at least one die held on the thermal pressurizer.

12. The method of claim 11 , wherein bonding the first die on the second die includes:
heating and thermally pressurizing the first die on the second die, using the thermal pressurizer; and
reflecting heat emitted from a side surface of the first die again to the first die, using the at least one thermal compensating block.

13. The method of claim 12 , wherein heating and thermally pressurizing the first die on the second die includes reflowing the bumps to form conductive bumps between the first die and the second die.

14. The method of claim 11 , further comprising bonding a third die on the first die, using the bonding head.

15. The method of claim 11 , wherein the at least one thermal compensating block includes a thermal insulating material.

16. The method of claim 11 , wherein:
the at least one thermal compensating block includes a heating source therein, and
the heat reflective surface is a second heating surface that faces a side surface of the at least one die.

17. The method of claim 11 , wherein the at least one thermal compensating block extends to surround a corner portion of the at least one die.

18. The method of claim 11 , wherein the at least one thermal compensating block extends to completely surround the at least one die.

19. The method of claim 11 , wherein a spacing distance between the heat reflective surface and a side surface of the at least one die is 10 mm or less.

20. The method of claim 11 , wherein the at least one thermal compensating block includes a plurality of stacked blocks.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Lee Jonggu
• KIM SungHyup
• Kim Byungjo
• Lee Sanghoon
• Lee Sukwon
• Choi Sebin

Classifications

• H10W74/15

  on active surfaces of flip-chip devices, e.g. underfills · CPC title

• H10W72/0711

  Apparatus therefor · CPC title

• H10W72/877

  Bump connectors and die-attach connectors · CPC title

• H10W72/072

  of bump connectors · CPC title

• H10W72/241

  Dispositions, e.g. layouts · CPC title