Hybrid bonding and apparatus for performing the same

Patent metadata

Field	Value
Publication number	US-9331032-B2
Application number	US-201313787566-A
Country	US
Kind code	B2
Filing date	Mar 6, 2013
Priority date	Mar 6, 2013
Publication date	May 3, 2016
Grant date	May 3, 2016

Abstract

A method includes performing a hybrid bonding to bond a first package component to a second package component, so that a bonded pair is formed. In the bonded pair, first metal pads in the first package component are bonded to second metal pads in the second package component, and a first surface dielectric layer at a surface of the first package component is bonded to a second surface dielectric layer at a surface of the second package component. After the hybrid bonding, a thermal compressive annealing is performed on the bonded pair.

First claim

What is claimed is:

1. A method comprising:
performing a hybrid bonding in a pre-bonding station to bond a first package component to a second package component to form a bonded pair, wherein first metal pads in the first package component are bonded to second metal pads in the second package component, and a first surface dielectric layer at a surface of the first package component is bonded to a second surface dielectric layer at a surface of the second package component;
wherein after the hybrid bonding, the first metal pads are bonded to the second metal pads through direct metal-to-metal bonding, and the first surface dielectric layer is bonded to the second surface dielectric layer through fusion bonding;
after the hybrid bonding, transferring the bonded pair from the pre-bonding station to a thermal compressive annealing station; and
in the thermal compressive annealing station, performing a thermal compressive annealing on the bonded pair.

2. The method of claim 1 , wherein an oxide comprised in the first surface dielectric layer is bonded to the second surface dielectric layer.

3. The method of claim 1 , wherein during the thermal compressive annealing, a plurality of bonded pairs identical to the bonded pair is placed between a bottom plate and a top plate, and is placed at a same level as the bonded pair, wherein the plurality of bonded pairs is physically disconnected from each other, and wherein during the thermal compressive annealing, a pressing force is applied to the top plate.

4. The method of claim 1 , wherein during the thermal compressive annealing, a plurality of bonded pairs identical to the bonded pair is placed between a bottom plate and a top plate, and is stacked, and wherein during the thermal compressive annealing, a pressing force is applied to the top plate.

5. The method of claim 1 , wherein during the thermal compressive annealing, a plurality of bonded pairs identical to the bonded pair is each placed over one of a plurality of separators, with the plurality of separators being guided by a guide, and wherein during the thermal compressive annealing, a pressing force is applied to press the plurality of bonded pairs.

6. The method of claim 1 further comprising, before the hybrid bonding, performing a plasma treatment or an acid treatment on one of the first package component and the second package component.

7. A method comprising:
aligning a first wafer to a second wafer;
bonding the first wafer to the second wafer to form a bonded pair in a pre-bonding station, wherein the bonded pair comprises:
metal-to-metal bonds comprising first metal pads in the first wafer bonded to second metal pads in the second wafer; and
fusion bonds comprising a first surface dielectric layer at a surface of the first wafer bonded to a second surface dielectric layer at a surface of the second wafer;

after the step of bonding, transferring the bonded pair from the pre-bonding station to a thermal compressive annealing station; and
in the thermal compressive annealing station, performing an annealing on the bonded pair, wherein during the annealing, the first wafer and the second wafer are pressed against each other by a pressing force.

8. The method of claim 7 , wherein the annealing is performed at a temperature between 300° C. and 450° C.

9. The method of claim 7 , wherein the pressing force is between 5 Kilonewton and 350 Kilonewton.

10. The method of claim 7 , wherein the annealing is performed for a period of time between 0.5 hours and 4 hours.

11. The method of claim 7 , wherein during the annealing, a plurality of bonded pairs identical to the bonded pair receives the pressing force simultaneously, and is annealed simultaneously, and the plurality of bonded pairs is not bonded to each other.

12. The method of claim 7 , wherein during the annealing, a plurality of bonded pairs identical to the bonded pair is each placed over one of a plurality of separators, with the plurality of separators being guided by a guide, and wherein during the annealing, a pressing force is applied to the plurality of bonded pairs simultaneously.

13. The method of claim 7 further comprising, before the step of bonding, performing a plasma treatment on each of the first wafer and the second wafer.

14. A method comprising:
performing a hybrid bonding in a pre-bonding station to form a plurality of bonded pairs, wherein each of the plurality of bonded pairs comprises:
a first package component bonded to a second package component to form a bonded pair, wherein first metal pads in the first package component are bonded to second metal pads in the second package component, and the first metal pads and the second metal pads are non-solder metal pads;
a first surface dielectric layer at a surface of the first package component bonded to a second surface dielectric layer at a surface of the second package component; and

after the hybrid bonding, transferring the plurality of bonded pairs from the pre-bonding station to a thermal compressive annealing station; and
in the thermal compressive annealing station, performing a thermal compressive annealing on the plurality of bonded pairs, wherein during the thermal compressive annealing, the plurality of bonded pairs is placed between a bottom plate and a top plate, and is placed at a same level, and during the thermal compressive annealing, a pressing force is applied to the top plate.

15. The method of claim 14 , wherein the first surface dielectric layer comprises a silicon-containing dielectric bonded to the second surface dielectric layer.

16. The method of claim 14 , wherein a top surface of each of the plurality of bonded pairs is in contact with the top plate, and a bottom surface of each of the plurality of bonded pairs is in contact with the bottom plate, and each of the plurality of bonded pairs is a discrete pair physically separate from remaining ones of the plurality of bonded pairs.

17. The method of claim 14 further comprising, before the hybrid bonding, performing a plasma treatment or an acid treatment on the first package component.

18. The method of claim 11 , wherein the plurality of bonded pairs is stacked into a same stack, and wherein in the annealing, a pressing force is applied to a top bonded pair in the stack.

19. The method of claim 11 , wherein the plurality of bonded pairs is at a same level, and is placed between a top plate and a bottom plate.

20. The method of claim 1 , wherein the first metal pads and the second metal pads are non-solder metal pads.

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Liu Ping-Yin
• HUANG Xin-hua
• Huang Chih-Hui
• Chao Lan-Lin
• Tu Yeur-Luen
• Lu Yan-Chih
• Sze Jhy-Jyi
• Tsai Chia-Shiung

Classifications

• H10W90/792

  between multiple chips · CPC title

• H10W80/335

  Ultrasonic bonding · CPC title

• H10W80/334

  Thermocompression bonding · CPC title

• H10W80/327

  characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers · CPC title

• H10W80/312

  characterised by the direct bonding of electrically conductive pads · CPC title