Selective area heating for 3D chip stack

US9105629B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9105629-B2
Application numberUS-201313787913-A
CountryUS
Kind codeB2
Filing dateMar 7, 2013
Priority dateMar 7, 2013
Publication dateAug 11, 2015
Grant dateAug 11, 2015

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Abstract

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A method of forming a 3D package including joining an interposer to a laminate chip carrier with the solid state diffusion of a first plurality of solder bumps by applying a first selective non-uniform heat, a first selective non-uniform cooling, and first uniform pressure, joining a top chip to the interposer with the solid state diffusion of a second plurality of solder bumps by applying a second selective non-uniform heat and second uniform pressure, heating the 3D package and the first and second pluralities of solder bumps to a temperature greater than the reflow temperature of the first and second pluralities of solder bumps, where the second plurality of solder bumps achieves the reflow temperature before the first plurality of solder bumps, where a temperature of the first and second selective non-uniform heat is less than the reflow temperature of the first and second pluralities of solder bumps, respectively.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of forming a 3D package comprising a laminate chip carrier, an interposer, and a top chip, the method comprising: attaching a first plurality of solder bumps of the laminate chip carrier to a first plurality of metallic contacts of the interposer by applying a first selective non-uniform heat, a first selective non-uniform cooling, and a first uniform pressure to the first plurality of solder bumps, resulting in solid state diffusion of the first pl…

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What does patent US9105629B2 cover?
A method of forming a 3D package including joining an interposer to a laminate chip carrier with the solid state diffusion of a first plurality of solder bumps by applying a first selective non-uniform heat, a first selective non-uniform cooling, and first uniform pressure, joining a top chip to the interposer with the solid state diffusion of a second plurality of solder bumps by applying a se…
Who is the assignee on this patent?
IBM
What technology area does this patent fall under?
Primary CPC classification H10W95/00. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Aug 11 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).