Semiconductor device including vertically integrated optical and electronic devices and comprising a superlattice

Patent metadata

Field	Value
Publication number	US-10884185-B2
Application number	US-201916380111-A
Country	US
Kind code	B2
Filing date	Apr 10, 2019
Priority date	Apr 12, 2018
Publication date	Jan 5, 2021
Grant date	Jan 5, 2021

Abstract

A semiconductor device may include a substrate having waveguides thereon, and a superlattice overlying the substrate and waveguides. The superlattice may include stacked groups of layers, with each group of layers comprising a stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The semiconductor device may further include an active device layer on the superlattice including at least one active semiconductor device.

First claim

That which is claimed is:

1. A semiconductor device comprising:
a substrate having a plurality of waveguides thereon;
a superlattice overlying the substrate and waveguides, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions; and
an active device layer on the superlattice comprising at least one active semiconductor device.

2. The semiconductor device of claim 1 wherein the substrate comprises a semiconductor-on-insulator (SOI) substrate.

3. The semiconductor device of claim 1 further comprising a plurality of optical modulator regions within the superlattice.

4. The semiconductor device of claim 3 further comprising vias extending through the active device layer to the optical modulator regions.

5. The semiconductor device of claim 3 wherein the optical modulator regions comprise a dopant.

6. The semiconductor device of claim 1 wherein the at least one active optical device comprises at least one metal oxide semiconductor field effect transistor (MOSFET).

7. The semiconductor device of claim 1 wherein the base semiconductor monolayers comprise silicon.

8. The semiconductor device of claim 1 wherein the at least one non-semiconductor monolayer comprises oxygen.

9. A semiconductor device comprising:
a semiconductor-on-insulator (SOI) substrate having a plurality of waveguides thereon;
a superlattice overlying the SOI substrate and waveguides, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;
a plurality of optical modulator regions within the superlattice; and
an active device layer on the superlattice comprising at least one active semiconductor device.

10. The semiconductor device of claim 9 further comprising vias extending through the active device layer to the optical modulator regions.

11. The semiconductor device of claim 9 wherein the optical modulator regions comprise a dopant.

12. The semiconductor device of claim 9 wherein the at least one active optical device comprises at least one metal oxide semiconductor field effect transistor (MOSFET).

13. The semiconductor device of claim 9 wherein the base semiconductor monolayers comprise silicon.

14. The semiconductor device of claim 9 wherein the at least one non-semiconductor monolayer comprises oxygen.

15. A semiconductor device comprising:
a substrate having a plurality of waveguides thereon;
a superlattice overlying the substrate and waveguides, the superlattice comprising a plurality of stacked groups of layers, each group of layers comprising a plurality of stacked base silicon monolayers defining a base silicon portion, and at least one oxygen monolayer constrained within a crystal lattice of adjacent base silicon portions; and
an active device layer on the superlattice comprising at least one active semiconductor device.

16. The semiconductor device of claim 15 wherein the substrate comprises a semiconductor-on-insulator (SOI) substrate.

17. The semiconductor device of claim 15 further comprising a plurality of optical modulator regions within the superlattice.

18. The semiconductor device of claim 17 further comprising vias extending through the active device layer to the optical modulator regions.

19. The semiconductor device of claim 17 wherein the optical modulator regions comprise a dopant.

20. The semiconductor device of claim 15 wherein the at least one active optical device comprises at least one metal oxide semiconductor field effect transistor (MOSFET).

Assignees

• Atomera Inc

Inventors

• Stephenson Robert John

Classifications

• H10P14/3252

  Alternating layers, e.g. superlattice · CPC title

• H10W20/42

  Vias, e.g. via plugs · CPC title

• H10D87/00

  Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate · CPC title

• H10D62/8162

  having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation · CPC title

• H10H20/811

  having quantum effect structures or superlattices, e.g. tunnel junctions · CPC title