Memory device and method for forming thereof
US-12520500-B2 · Jan 6, 2026 · US
This page is not indexed by search engines while we improve data quality.
Yang Sin-Yi patents
Yang Sin-Yi is listed as an inventor on 49 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Yang Sin-Yi |
| Total patents | 49 |
| First publication | Dec 25, 2018 |
| Latest publication | Jan 6, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Integrated circuit
US-2025255190-A1 · Aug 7, 2025 · US
Integrated circuit
US-12317751-B2 · May 27, 2025 · US
Gradient protection layer in mtj manufacturing
US-2025133967-A1 · Apr 24, 2025 · US
Gradient protection layer in MTJ manufacturing
US-12219879-B2 · Feb 4, 2025 · US
Semiconductor structure and method for forming the same
US-12075707-B2 · Aug 27, 2024 · US
Magnetic tunnel junction devices
US-2024237551-A1 · Jul 11, 2024 · US
Magnetic tunnel junction device
US-11968908-B2 · Apr 23, 2024 · US
Semiconductor structure and manufacturing method of the same
US-11944017-B2 · Mar 26, 2024 · US
Gradient protection layer in mtj manufacturing
US-2024099150-A1 · Mar 21, 2024 · US
Recent patents
Latest publications not already listed above.
Integrated circuit
US-2024023457-A1 · Jan 18, 2024 · US
Gradient protection layer in MTJ manufacturing
US-11856865-B2 · Dec 26, 2023 · US
Semiconductor structure and method for forming the same
US-2023380293-A1 · Nov 23, 2023 · US
Integrated circuit
US-11800812-B2 · Oct 24, 2023 · US
Semiconductor structure and method for forming the same
US-11770977-B2 · Sep 26, 2023 · US
Semiconductor structure and manufacturing method of the same
US-2023276715-A1 · Aug 31, 2023 · US
Metal Etching Stop Layer in Magnetic Tunnel Junction Memory Cells
US-2023263068-A1 · Aug 17, 2023 · US
Semiconductor structure and manufacturing method of the same
US-11683991-B2 · Jun 20, 2023 · US
Metal etching stop layer in magnetic tunnel junction memory cells
US-11665971-B2 · May 30, 2023 · US
Memory device structure and method for forming the same
US-11545619-B2 · Jan 3, 2023 · US
Semiconductor device and methods of manufacture
US-11508849-B2 · Nov 22, 2022 · US
Gradient Protection Layer in MTJ Manufacturing
US-2022367794-A1 · Nov 17, 2022 · US
Magnetic Tunnel Junction Device
US-2022336727-A1 · Oct 20, 2022 · US
Memory device and method for forming thereof
US-2022271087-A1 · Aug 25, 2022 · US
Gradient protection layer in MTJ manufacturing
US-11411176-B2 · Aug 9, 2022 · US
Magnetic of forming magnetic tunnel junction device using protective mask
US-11387406-B2 · Jul 12, 2022 · US
Integrated circuit
US-2022190237-A1 · Jun 16, 2022 · US
Semiconductor structure and method for forming the same
US-2022131070-A1 · Apr 28, 2022 · US
Integrated circuit
US-11271150-B2 · Mar 8, 2022 · US
Memory device structure and method for forming the same
US-2022029091-A1 · Jan 27, 2022 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Taiwan Semiconductor Mfg Co Ltd | 53 |
Top CPC classifications
Most common classification codes across this inventor's patents.