Gradient protection layer in MTJ manufacturing

Patent metadata

Field	Value
Publication number	US-11856865-B2
Application number	US-202217869335-A
Country	US
Kind code	B2
Filing date	Jul 20, 2022
Priority date	Oct 25, 2018
Publication date	Dec 26, 2023
Grant date	Dec 26, 2023

Abstract

A method includes forming Magnetic Tunnel Junction (MTJ) stack layers, which includes depositing a bottom electrode layer; depositing a bottom magnetic electrode layer over the bottom electrode layer; depositing a tunnel barrier layer over the bottom magnetic electrode layer; depositing a top magnetic electrode layer over the tunnel barrier layer; and depositing a top electrode layer over the top magnetic electrode layer. The method further includes patterning the MTJ stack layers to form a MTJ; and performing a passivation process on a sidewall of the MTJ to form a protection layer. The passivation process includes reacting sidewall surface portions of the MTJ with a process gas comprising elements selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

First claim

What is claimed is:

1. A device comprising:
a Magnetic Tunnel Junction (MTJ) stack comprising:
a bottom electrode;
a bottom magnetic electrode over the bottom electrode;
a tunnel barrier over the bottom magnetic electrode;
a top magnetic electrode over the tunnel barrier; and
a top electrode over the top magnetic electrode; and

a dielectric protection layer extending onto a sidewall of the MTJ, wherein the dielectric protection layer comprises:
a first portion;
a second portion lower than and joined to the first portion; and
a third portion lower than and joined to the second portion, wherein the first portion, the second portion, and the third portion have different thicknesses.

2. The device of claim 1 , wherein the first portion comprises a lower part on a first sidewall of the top magnetic electrode, wherein the lower part comprises first materials of the top magnetic electrode and an additional element.

3. The device of claim 2 , wherein the first portion further comprises an upper part on a second sidewall of the top electrode, wherein the upper part comprises materials of the top electrode and the additional element.

4. The device of claim 2 , wherein the additional element is selected from the group consisting of oxygen, carbon, nitrogen, and combinations thereof.

5. The device of claim 1 , wherein the second portion is on a sidewall of the bottom magnetic electrode, and wherein the second portion comprises second materials of the bottom magnetic electrode and an additional element.

6. The device of claim 1 , wherein the third portion is on a sidewall of the bottom electrode, and wherein the third portion comprises second materials of the bottom electrode and an additional element.

7. The device of claim 1 , wherein the dielectric protection layer further extends on, and forms a horizontal interface with, a top surface of the top electrode.

8. The device of claim 1 further comprising a conductive feature, wherein the conductive feature penetrates through the dielectric protection layer to contact a top surface of the top electrode.

9. The device of claim 1 , wherein the dielectric protection layer extends to a bottom surface of the bottom electrode.

10. The device of claim 1 , wherein the first portion of the dielectric protection layer further extends on a sidewall of the tunnel barrier.

11. A device comprising:
a bottom electrode;
a top electrode over the bottom electrode;
a memory stack between the bottom electrode and the top electrode, the memory stack comprising:
a bottom magnetic electrode over the bottom electrode;
a tunnel barrier over the bottom magnetic electrode; and
a top magnetic electrode over the tunnel barrier; and

a dielectric layer on sidewalls of the memory stack, wherein the dielectric layer comprises:
a first portion; and
a second portion underlying the first portion, wherein the first portion and the second portion comprise different materials.

12. The device of claim 11 , wherein the dielectric layer further comprising a third portion underlying and joining to the second portion, wherein the second portion and the third portion comprise different materials.

13. The device of claim 12 , wherein the second portion is thicker than the third portion.

14. The device of claim 11 , wherein the first portion is thicker than the second portion.

15. The device of claim 11 , wherein each of the first portion and the second portion comprises an element selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof.

16. The device of claim 11 , wherein the first portion is on a sidewall of the top magnetic electrode, and wherein the first portion comprises elements in the top magnetic electrode.

17. The device of claim 11 , wherein the second portion is on a sidewall of the bottom magnetic electrode, and wherein the second portion comprises elements in the bottom magnetic electrode.

18. A device comprising:
a Magnetic Tunnel Junction (MTJ) comprising:
a bottom magnetic electrode;
a tunnel barrier over the bottom magnetic electrode; and
a top magnetic electrode over the tunnel barrier; and

a dielectric layer extending on a sidewall of the MTJ, wherein the dielectric layer comprises a compound material of:
a doping element selected from the group consisting of oxygen, nitrogen, carbon, and combinations thereof; and
elements of the MTJ.

19. The device of claim 18 , wherein a first portion of the dielectric layer on a sidewall of the top magnetic electrode has a first thickness, and a second portion of the dielectric layer on a sidewall of the bottom magnetic electrode has a second thickness smaller than the first thickness.

20. The device of claim 19 further comprising a bottom electrode underlying the bottom magnetic electrode, wherein the dielectric layer further comprises a third portion on a sidewall of the bottom electrode, and the third portion has a third thickness smaller than the second thickness.

Assignees

• Taiwan Semiconductor Mfg Co Ltd
• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Peng Tai-Yen
• Chen Yu-Shu
• Yang Sin-Yi
• Wang Chen-Jung
• Huang Chien Chung
• Lin Han-Ting
• Shieh Jyu-Horng
• Fu Qiang

Classifications

• H10B61/00

  Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices · CPC title

• H10N50/01 Primary

  Manufacture or treatment · CPC title

• H10N50/80

  Constructional details · CPC title

• H10N50/10

  Magnetoresistive devices · CPC title

• H10N50/85

  Materials of the active region · CPC title