Memory arrays with backside components and angled transistors
US-12520482-B2 · Jan 6, 2026 · US
This page is not indexed by search engines while we improve data quality.
Weber Cory E patents
Weber Cory E is listed as an inventor on 58 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Weber Cory E |
| Total patents | 58 |
| First publication | Jun 4, 2015 |
| Latest publication | Jan 6, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Forksheet transistors with self-aligned dielectric spine
US-2025301708-A1 · Sep 25, 2025 · US
Source/drain regions in integrated circuit structures
US-12389629-B2 · Aug 12, 2025 · US
Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devices
US-12310044-B2 · May 20, 2025 · US
Reducing off-state leakage in semiconductor devices
US-12191349-B2 · Jan 7, 2025 · US
Extension of nanocomb transistor arrangements to implement gate all around
US-2024355682-A1 · Oct 24, 2024 · US
Extension of nanocomb transistor arrangements to implement gate all around
US-12068206-B2 · Aug 20, 2024 · US
Semiconductor nanowire device having (111)-plane channel sidewalls
US-11990476-B2 · May 21, 2024 · US
Memory arrays with backside components and angled transistors
US-2024008255-A1 · Jan 4, 2024 · US
Nanowire structures having wrap-around contacts
US-11757026-B2 · Sep 12, 2023 · US
Recent patents
Latest publications not already listed above.
Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devices
US-2023046755-A1 · Feb 16, 2023 · US
Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devices
US-11522072-B2 · Dec 6, 2022 · US
Contacts to n-type transistors with X-valley layer over L-valley channels
US-11515420-B2 · Nov 29, 2022 · US
Semiconductor nanowire device having (111)-plane channel sidewalls
US-2022310600-A1 · Sep 29, 2022 · US
Semiconductor nanowire device having (111)-plane channel sidewalls
US-11398478-B2 · Jul 26, 2022 · US
Extension of nanocomb transistor arrangements to implement gate all around
US-2022093474-A1 · Mar 24, 2022 · US
Methods of doping fin structures of non-planar transistor devices
US-11264453-B2 · Mar 1, 2022 · US
Methods of doping fin structures of non-planar transistor devices
US-11222947-B2 · Jan 11, 2022 · US
Source/drain regions in integrated circuit structures
US-2021384307-A1 · Dec 9, 2021 · US
Techniques for increasing channel region tensile strain in n-MOS devices
US-11011620-B2 · May 18, 2021 · US
Vertically stacked devices with self-aligned regions formed by direct self assembly (DSA) processing
US-10991696-B2 · Apr 27, 2021 · US
Semiconductor nanowire device having (111)-plane channel sidewalls
US-2021074703-A1 · Mar 11, 2021 · US
Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devices
US-2021043755-A1 · Feb 11, 2021 · US
Nanowire structures having wrap-around contacts
US-2021036137-A1 · Feb 4, 2021 · US
Backside fin recess control with multi-HSI option
US-10910405-B2 · Feb 2, 2021 · US
Improved contacts to n-type transistors with l-valley channels
US-2020411690-A1 · Dec 31, 2020 · US
Vertical integration scheme and circuit elements architecture for area scaling of semiconductor devices
US-10847635-B2 · Nov 24, 2020 · US
Semiconductor device having metallic source and drain regions
US-10847653-B2 · Nov 24, 2020 · US
Nanowire structures having wrap-around contacts
US-10840366-B2 · Nov 17, 2020 · US
Reducing off-state leakage in semiconductor devices
US-2020279910-A1 · Sep 3, 2020 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Intel Corp | 57 |
| Weber Cory E | 2 |
| Giles Martin D | 1 |
| Cappellani Annalisa | 1 |
| Kabehie Sanaz | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D30/62 | 39 |
| H01L29/785 | 31 |
| H10D62/121 | 29 |
| H10D84/038 | 29 |
| H10D30/024 | 26 |