Device without zero mark layer
US-10553488-B2 · Feb 4, 2020 · US
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Wang Daxiang patents
Wang Daxiang is listed as an inventor on 14 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Wang Daxiang |
| Total patents | 14 |
| First publication | May 12, 2016 |
| Latest publication | Feb 4, 2020 |
Notable patents
Publications ranked by popularity score, then publication date.
Integrated magnetic random access memory with logic device
US-10199572-B2 · Feb 5, 2019 · US
Integrated magnetic random access memory with logic device
US-10121964-B2 · Nov 6, 2018 · US
Method for producing integrated circuit memory cells with less dedicated lithographic steps
US-2018090505-A1 · Mar 29, 2018 · US
Method for producing integrated circuit memory cells with less dedicated lithographic steps
US-9929165-B1 · Mar 27, 2018 · US
Device without zero mark layer
US-2018012800-A1 · Jan 11, 2018 · US
Test structure for monitoring liner oxidation
US-9793185-B2 · Oct 17, 2017 · US
Plasma discharge path
US-9793208-B2 · Oct 17, 2017 · US
Device without zero mark layer
US-9773702-B2 · Sep 26, 2017 · US
Plasma discharge path
US-2017092584-A1 · Mar 30, 2017 · US
Recent patents
Latest publications not already listed above.
Integrated magnetic random access memory with logic device
US-2017084820-A1 · Mar 23, 2017 · US
Integrated magnetic random access memory with logic device
US-2016351797-A1 · Dec 1, 2016 · US
Device without zero mark layer
US-2016190041-A1 · Jun 30, 2016 · US
Test structure for monitoring liner oxidation
US-2016133531-A1 · May 12, 2016 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Globalfoundries Sg Pte Ltd | 14 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10W20/081 | 4 |
| H01L21/76802 | 4 |
| H01L43/12 | 4 |
| H10B61/22 | 4 |
| H10N50/01 | 4 |