Microwave integrated circuits including gallium-nitride devices on silicon
US-12581728-B2 · Mar 17, 2026 · US
This page is not indexed by search engines while we improve data quality.
Struble Wayne Mack patents
Struble Wayne Mack is listed as an inventor on 52 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Struble Wayne Mack |
| Total patents | 52 |
| First publication | Oct 25, 2018 |
| Latest publication | Mar 17, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
High power radio frequency cascode device
US-2026039259-A1 · Feb 5, 2026 · US
Layout techniques and optimization for power transistors
US-2025324711-A1 · Oct 16, 2025 · US
Layout techniques and optimization for power transistors
US-12363983-B2 · Jul 15, 2025 · US
Circuit and method of shutdown for bias network in high voltage amplifier
US-12323113-B2 · Jun 3, 2025 · US
Parasitic capacitance reduction in GaN-on-silicon devices
US-12266523-B2 · Apr 1, 2025 · US
Extrinsic field termination structures for improving reliability of high-voltage, high-power active devices
US-12261207-B2 · Mar 25, 2025 · US
High voltage stacked transistor amplifier
US-2024429873-A1 · Dec 26, 2024 · US
Atomic layer deposition of barrier metal layer for electrode of gallium nitride material device
US-2024420995-A1 · Dec 19, 2024 · US
Atomic layer deposition of barrier metal layer for electrode of gallium nitride material device
US-12112983-B2 · Oct 8, 2024 · US
Recent patents
Latest publications not already listed above.
High voltage stacked transistor amplifier
US-12113484-B2 · Oct 8, 2024 · US
Iii-nitride material semiconductor structures on conductive silicon substrates
US-2024266405-A1 · Aug 8, 2024 · US
Gate metal formation on gallium nitride or aluminum gallium nitride
US-2024258110-A1 · Aug 1, 2024 · US
Extrinsic field termination structures for improving reliability of high-voltage, high-power active devices
US-2024222444-A1 · Jul 4, 2024 · US
Layout techniques and optimization for power transistors
US-2024194750-A1 · Jun 13, 2024 · US
Parasitic capacitance reduction in gan-on-silicon devices
US-2024178220-A1 · May 30, 2024 · US
Gate metal formation on gallium nitride or aluminum gallium nitride
US-11990343-B2 · May 21, 2024 · US
Extrinsic field termination structures for improving reliability of high-voltage, high-power active devices
US-11961888-B2 · Apr 16, 2024 · US
Reduced interfacial area III-nitride material semiconductor structures
US-11942518-B2 · Mar 26, 2024 · US
Parasitic capacitance reduction in GaN devices
US-11929364-B2 · Mar 12, 2024 · US
Layout techniques and optimization for power transistors
US-11929408-B2 · Mar 12, 2024 · US
Heterolithic integrated circuits including integrated devices formed on semiconductor materials of different elemental composition
US-11817450-B2 · Nov 14, 2023 · US
Suppression of parasitic acoustic waves in integrated circuit devices
US-2023216471-A1 · Jul 6, 2023 · US
Microwave integrated circuits including gallium-nitride devices on silicon
US-2023207557-A1 · Jun 29, 2023 · US
Microwave integrated circuits including gallium-nitride devices on silicon
US-2023207558-A1 · Jun 29, 2023 · US
Circuit and Method of Shutdown for Bias Network in High Voltage Amplifier
US-2023170857-A1 · Jun 1, 2023 · US
Heterolithic microwave integrated circuits including gallium-nitride devices on intrinsic semiconductor
US-11640960-B2 · May 2, 2023 · US
Microwave integrated circuits including gallium-nitride devices on silicon
US-11600614-B2 · Mar 7, 2023 · US
High voltage stacked transistor amplifier
US-2022321062-A1 · Oct 6, 2022 · US
Integration of multiple discrete GaN devices
US-11417644-B2 · Aug 16, 2022 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Macom Tech Solutions Holdings Inc | 52 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D62/8503 | 33 |
| H10D84/01 | 30 |
| H01L29/2003 | 28 |
| H01L27/0605 | 26 |
| H10W44/20 | 20 |