Semiconductor devices with length-graded channel
US-2026101553-A1 · Apr 9, 2026 · US
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Scholze Andreas patents
Scholze Andreas is listed as an inventor on 23 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Scholze Andreas |
| Total patents | 23 |
| First publication | Nov 5, 2015 |
| Latest publication | Apr 9, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Semiconductor transistors having minimum gate-to-source voltage clamp circuits
US-2023418319-A1 · Dec 28, 2023 · US
Contact-first field-effect transistors
US-11101367-B2 · Aug 24, 2021 · US
Contact-first field-effect transistors
US-2020066871-A1 · Feb 27, 2020 · US
Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode
US-10297589-B2 · May 21, 2019 · US
Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction
US-10249714-B2 · Apr 2, 2019 · US
Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction and semiconductor device having reduced junction leakage
US-9793272-B2 · Oct 17, 2017 · US
Method of forming epitaxial buffer layer for finfet source and drain junction leakage reduction
US-2017294510-A1 · Oct 12, 2017 · US
Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction
US-9786661-B2 · Oct 10, 2017 · US
FINFET having notched fins and method of forming same
US-9786765-B2 · Oct 10, 2017 · US
Recent patents
Latest publications not already listed above.
Finfet having notched fins and method of forming same
US-2017236917-A1 · Aug 17, 2017 · US
Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode
US-2017229443-A1 · Aug 10, 2017 · US
Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode
US-9704852-B2 · Jul 11, 2017 · US
Subsurface wires of integrated chip and methods of forming
US-9601513-B1 · Mar 21, 2017 · US
Field-isolated bulk FinFET
US-9536882-B2 · Jan 3, 2017 · US
Electrostatic discharge and passive structures integrated in a veritcal gate fin-type field effect diode
US-2016379972-A1 · Dec 29, 2016 · US
Contact-first field-effect transistors
US-2016372600-A1 · Dec 22, 2016 · US
Method of forming epitaxial buffer layer for finfet source and drain junction leakage reduction
US-2016284701-A1 · Sep 29, 2016 · US
Method of forming epitaxial buffer layer for finfet source and drain junction leakage reduction
US-2016276463-A1 · Sep 22, 2016 · US
Electrostatic discharge and passive structures integrated in a vertical gate fin-type field effect diode
US-9391065-B1 · Jul 12, 2016 · US
Method of forming epitaxial buffer layer for finFET source and drain junction leakage reduction
US-9390976-B2 · Jul 12, 2016 · US
Field-isolated bulk finfet
US-2016181247-A1 · Jun 23, 2016 · US
Epitaxial buffer layer for finfet source and drain junction leakage reduction
US-2015318211-A1 · Nov 5, 2015 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| IBM | 13 |
| Globalfoundries Inc | 9 |
| Renesas Electronics Corp | 8 |
| Wolfspeed Inc | 2 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D30/024 | 15 |
| H01L29/66795 | 12 |
| H10P32/171 | 11 |
| H10D62/151 | 11 |
| H10D84/038 | 10 |