Multifilament resistive memory with insulation layers
US-12568776-B2 · Mar 3, 2026 · US
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Rozen John patents
Rozen John is listed as an inventor on 98 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Rozen John |
| Total patents | 98 |
| First publication | Mar 30, 2017 |
| Latest publication | Mar 3, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Resistive memory with resistance spreading layer
US-12550632-B2 · Feb 10, 2026 · US
Self-aligned crossbar-compatible electrochemical memory structure
US-12369330-B2 · Jul 22, 2025 · US
Multifilament resistive memory with insulation layers
US-2024090350-A1 · Mar 14, 2024 · US
Resistive memory with resistance spreading layer
US-2024090352-A1 · Mar 14, 2024 · US
Three-terminal oxygen intercalation neuromorphic devices
US-11832534-B2 · Nov 28, 2023 · US
Etch-resistant doped scavenging carbide electrodes
US-11770986-B2 · Sep 26, 2023 · US
Self-aligned crossbar-compatible electrochemical memory structure
US-2023165015-A1 · May 25, 2023 · US
Sub-stoichiometric metal-oxide thin films
US-11646199-B2 · May 9, 2023 · US
Neuromorphic device with oxygen scavenging gate
US-11586899-B2 · Feb 21, 2023 · US
Recent patents
Latest publications not already listed above.
Three-dimensional confined memory cell with decoupled read-write
US-11569444-B2 · Jan 31, 2023 · US
Two-terminal non-volatile memory cell for decoupled read and write operations
US-11568927-B2 · Jan 31, 2023 · US
Etch-resistant doped scavenging carbide electrodes
US-2022344586-A1 · Oct 27, 2022 · US
Ligand selection for ternary oxide thin films
US-2022328302-A1 · Oct 13, 2022 · US
Two-terminal non-volatile memory cell for decoupled read and write operations
US-2022319588-A1 · Oct 6, 2022 · US
Three-dimensional confined memory cell with decoupled read-write
US-2022320426-A1 · Oct 6, 2022 · US
Ligand selection for ternary oxide thin films
US-11462398-B2 · Oct 4, 2022 · US
Neuromorphic device driven by copper ion intercalation
US-11455521-B2 · Sep 27, 2022 · US
Laterally switching cell having sub-stoichiometric metal oxide active layer
US-11362274-B2 · Jun 14, 2022 · US
Conformal replacement gate electrode for short channel devices
US-11195929-B2 · Dec 7, 2021 · US
Thin film formation method
US-11189482-B2 · Nov 30, 2021 · US
Structures and methods for equivalent oxide thickness scaling on silicon germanium channel or III-V channel of semiconductor device
US-11152214-B2 · Oct 19, 2021 · US
Metal-oxide-based neuromorphic device
US-11121259-B2 · Sep 14, 2021 · US
Sub-stoichiometric metal-oxide thin films
US-2021272796-A1 · Sep 2, 2021 · US
Sub-stoichiometric metal-oxide thin films
US-11081343-B2 · Aug 3, 2021 · US
Laterally switching cell having sub-stoichiometric metal oxide active layer
US-2021217953-A1 · Jul 15, 2021 · US
Three-terminal oxygen intercalation neuromorphic devices
US-2021151669-A1 · May 20, 2021 · US
Vertical array of resistive switching devices having restricted filament regions and tunable top electrode volume
US-10991763-B2 · Apr 27, 2021 · US
Three-terminal copper-driven neuromorphic device
US-10957937-B2 · Mar 23, 2021 · US
Three-terminal neuromorphic vertical sensing
US-10936944-B2 · Mar 2, 2021 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| IBM | 98 |
| Ulvac Inc | 27 |
| Ulvac Tech Inc | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10N70/8833 | 44 |
| H10N70/24 | 30 |
| H10N70/253 | 25 |
| H10P14/6339 | 23 |
| H01L45/146 | 22 |