Self-aligned crossbar-compatible electrochemical memory structure

Patent metadata

Field	Value
Publication number	US-12369330-B2
Application number	US-202117455737-A
Country	US
Kind code	B2
Filing date	Nov 19, 2021
Priority date	Nov 19, 2021
Publication date	Jul 22, 2025
Grant date	Jul 22, 2025

Abstract

A memory structure is provided. The memory structure includes a top terminal, a multi-level nonvolatile electrochemical cell, a bottom terminal, a pedestal contact in the same metal level as the bottom terminal, and a vertical conductor fully self-aligned to the multi-level nonvolatile electrochemical cell and extending vertically from the pedestal contact.

First claim

What is claimed is:

1. A memory structure comprising:
a top terminal;
a multi-level nonvolatile electrochemical cell;
a bottom terminal;
a pedestal contact in the same metal level as the bottom terminal; and
a vertical conductor fully self-aligned to the multi-level nonvolatile electrochemical cell and extending vertically from the pedestal contact.

2. The structure of claim 1 , further comprising:
a dielectric sidewall spacer separating the multi-level nonvolatile electrochemical cell from the self-aligned vertical conductor.

3. The structure of claim 1 , wherein the top terminal comprises a single via.

4. The structure of claim 1 , wherein a height of the self-aligned vertical conductor is equal to a height of the multi-level nonvolatile electrochemical cell.

5. The structure of claim 1 , wherein the self-aligned vertical conductor directly contacts sidewalls of the multi-level nonvolatile electrochemical cell.

6. The structure of claim 1 , wherein the pedestal contact comprises multiple individual contact structures.

7. The structure of claim 1 , wherein the pedestal contact is a single congruent structure.

8. The structure of claim 1 , wherein the pedestal contact surrounds the bottom terminal.

9. A memory structure comprising:
a top terminal contacting a top contact;
a multi-level nonvolatile electrochemical cell;
a bottom terminal contacting a variable resistance channel of the multi-level nonvolatile electrochemical cell;
a pedestal contact in the same metal level as the bottom terminal and contacting the variable resistance channel of the multi-level nonvolatile electrochemical cell; and
a vertical conductor fully self-aligned to the multi-level nonvolatile electrochemical cell and extending vertically between the pedestal contact and the top contact.

10. The structure of claim 9 , further comprising:
a dielectric sidewall spacer separating the multi-level nonvolatile electrochemical cell from the self-aligned vertical conductor.

11. The structure of claim 9 , wherein the top terminal comprises a single via.

12. The structure of claim 9 , wherein a height of the self-aligned vertical conductor is equal to a height of the multi-level nonvolatile electrochemical cell.

13. The structure of claim 9 , wherein the self-aligned vertical conductor directly contacts sidewalls of the multi-level nonvolatile electrochemical cell.

14. The structure of claim 9 , wherein the pedestal contact comprises multiple individual contact structures.

15. The structure of claim 9 , wherein the pedestal contact is a single congruent structure.

16. The structure of claim 9 , wherein the pedestal contact surrounds the bottom terminal.

17. A method of forming a memory structure, the method comprising:
forming a top terminal contacting a top contact;
forming a multi-level nonvolatile electrochemical cell;
forming a bottom terminal contacting a variable resistance channel of the multi-level nonvolatile electrochemical cell;
forming a pedestal contact in the same metal level as the bottom terminal and contacting the variable resistance channel of the multi-level nonvolatile electrochemical cell; and
forming a vertical conducting fully self-aligned to the multi-level nonvolatile electrochemical cell and extending vertically between the pedestal contact and the top contact.

18. The method of claim 17 , further comprising:
forming a dielectric sidewall spacer separating the multi-level nonvolatile electrochemical cell from the self-aligned vertical conductor.

19. The method of claim 17 , wherein the pedestal contact comprises multiple individual contact structures.

20. The method of claim 17 , wherein the pedestal contact is a single congruent structure.

Assignees

• IBM

Inventors

• Rozen John

Classifications

• H10N50/80

  Constructional details · CPC title

• H10N50/01

  Manufacture or treatment · CPC title

• H10N70/253

  having three or more electrodes, e.g. transistor-like devices · CPC title

• H10N70/8416

  adapted for supplying ionic species · CPC title

• H10N70/823

  adapted for essentially horizontal current flow, e.g. bridge type devices · CPC title