Thin film formation method

Patent metadata

Field	Value
Publication number	US-11189482-B2
Application number	US-201816347904-A
Country	US
Kind code	B2
Filing date	May 11, 2018
Priority date	Jun 12, 2017
Publication date	Nov 30, 2021
Grant date	Nov 30, 2021

Abstract

A thin film formation method includes setting a film formation subject to 200° C. or higher. A first step includes changing a first state, in which a film formation material and a carrier gas are supplied so that the film formation material collects on the film formation subject, to a second state, in which the film formation material is omitted. A second step includes changing a third state, in which a hydrogen gas and a carrier gas are supplied to reduce the film formation material, to a fourth state, in which the hydrogen gas is omitted. The film formation material is any one of Al(C x H 2x+1 ) 3 , Al(C x H 2x+1 ) 2 H, and Al(C x H 2x+1 ) 2 Cl. The first step and the second step are alternately repeated to form an aluminum carbide film on the film formation subject such that a content rate of aluminum atoms is 20 atomic percent or greater.

First claim

The invention claimed is:

1. A thin film formation method comprising:
a first step of setting a temperature of a film formation subject to 333° C. to 500° C. or higher and changing a first state, in which a film formation material containing aluminum and carbon and a carrier gas of the film formation material are supplied to the film formation subject so that the film formation material collects on the film formation subject, to a second state, in which supplying of the film formation material is terminated; and
a second step of changing a third state, in which an active species, which includes hydrogen produced by exciting a reduction gas containing hydrogen, and a carrier gas of the reduction gas are supplied to the film formation subject to reduce the film formation material, to a fourth state, in which supplying of the reduction gas is terminated, wherein
the film formation material is any one selected from a group consisting of Al(C x (C x H 2x+1 ) 3 , Al(C x H 2x+1 ) 2 H, and Al(C x H 2x+1 ) 2 Cl, where x is an integer of one or greater in each general formula,
in each of the first step and the second step, the film formation subject does not contact any carbon-containing compounds other than the film formation material, and
the thin film formation method further comprises a state that alternately repeats the first step and the second step, thereby forming an aluminum carbide film on a surface of the film formation subject such that the aluminum carbide film has a content rate of aluminum atoms that is 20 atomic percent or greater.

2. The thin film formation method according to claim 1 , wherein the film formation material is any one selected from a group consisting of trimethylaluminum (TMA) (Al(CH 3 ) 3 ) and triethylaluminum (TEA) (Al(C 2 H 5 ) 3 ).

3. The thin film formation method according to claim 2 , wherein the film formation material is the triethylaluminum (TEA) (Al(C 2 H 5 ) 3 ), and the temperature of the film formation subject is set within a range of 330° C. to 430° C.

4. The thin film formation method according to claim 1 , wherein in a method for forming the aluminum carbide film, the film formation subject is placed in a vacuum chamber, the pressure of which is set within a range of 50 Pa to 1000 Pa.

5. The thin film formation method according to claim 1 , wherein the surface of the film formation subject includes irregularities.

6. The thin film formation method according to claim 1 , further comprising:
a formation step of forming the surface of the film formation subject so that the surface is conductive prior to the first step.

7. The thin film formation method according to claim 1 , wherein the film formation material includes a first film formation material, the thin film formation method further comprising:
a third step of changing a fifth state, in which a second film formation material containing aluminum and a carrier gas of the second film formation material are supplied to the film formation subject so that the second film formation material collects on the film formation subject, to a sixth state, in which supplying of the second film formation material is terminated,
wherein the second film formation material is any one selected from a group consisting of 1-methylpyrrolidine alane, trimethylamine borane hydride alane, and dimethylaluminum i-propoxide.

8. The thin film formation method according to claim 7 , further comprising: a state that repeats the third step.

9. The thin film formation method according to claim 1 , wherein
the film formation material includes a first film formation material,
in the first state, a second film formation material containing aluminum is further supplied to the film formation subject so that the second film formation material collects on the film formation subject,
in the second state, supplying of the first film formation material and the second film formation material is terminated, and
the second film formation material is any one selected from a group consisting of 1-methylpyrrolidine alane, trimethylamine borane hydride alane, and dimethylaluminum i-propoxide.

10. The thin film formation method according to claim 1 , wherein the reduction gas includes at least one of hydrogen gas, hydrazine, and organic hydrazine.

11. The thin film formation method according to claim 1 , wherein the third state supplies the reduction gas and the carrier gas to the film formation subject that is heated or supplies a plasma generated by the reduction gas and the carrier gas to the film formation subject, thereby supplying an active species including the hydrogen to the film formation subject.

Assignees

• Ulvac Inc
• IBM

Inventors

• Hatanaka Masanobu
• Ogawa Yohei
• Lee Keon-Chang
• Kato Nobuyuki
• Yamada Takakazu
• Rozen John

Classifications

• H10P14/69397

  the material containing two or more metal elements · CPC title

• H10P14/69394

  the material containing titanium, e.g. TiO2 · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/69391 Primary

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10D64/011

  of electrodes ohmically coupled to a semiconductor · CPC title