Three-dimensional confined memory cell with decoupled read-write

Patent metadata

Field	Value
Publication number	US-11569444-B2
Application number	US-202117217788-A
Country	US
Kind code	B2
Filing date	Mar 30, 2021
Priority date	Mar 30, 2021
Publication date	Jan 31, 2023
Grant date	Jan 31, 2023

Abstract

An embodiment of the invention may include a first electrode, a second electrode, and a multi-level nonvolatile electrochemical cell located between the first electrode and second electrode. The multi-level nonvolatile electrochemical cell may have a read path and a write path through the cell, where the read path and the write path are different.

First claim

What is claimed is:

1. A memory structure comprising:
a first electrode;
a multi-layer nonvolatile electrochemical cell, wherein a center of the multi-layer nonvolatile electrochemical cell comprises a conductive core laterally surrounded by a programming gate, wherein the conductive core is in contact with the first electrode, and wherein programming gate is laterally surrounded by a channel; and
a second electrode is in contact with the channel.

2. The structure of claim 1 , wherein the first electrode is in contact with the channel.

3. The structure of claim 1 , wherein the programming gate comprises an ion exchange layer.

4. The structure of claim 3 , wherein a material of the ion exchange layer comprises a metal oxide.

5. The structure of claim 4 , wherein the ion exchange layer comprises a metal-oxide reservoir.

6. The structure of claim 3 , wherein the first electrode is in contact with the channel, the ion exchange layer, and the conductive core.

7. The structure of claim 6 , wherein the ion exchange layer and the conductive core have a cross-sectional U-shape.

8. The structure of claim 6 , wherein the ion exchange layer has a substantially uniform first thickness, and wherein the channel has a substantially uniform second thickness.

9. A method of writing to a memory structure comprising:
creating a voltage between a first electrode and a second electrode of a multi-layer nonvolatile electrochemical cell;
wherein the voltage cause electrons to move through a variable resistance channel of the multi-layer nonvolatile electrochemical cell;
causes an electric field across a charge-exchange layer thereby causing ions to move along that electric field in in the multi-layer nonvolatile electrochemical cell; and
wherein the direction of movement of ions is different from the direction of movement of electrons, and
wherein the variable resistance channel extends from the first electrode to the second electrode.

10. The method of claim 9 , wherein the charge exchange layer comprises a metal oxide layer located in contact with the variable resistance channel.

11. The method of claim 9 , wherein an ion exchange layer of the multi-layer nonvolatile electrochemical cell includes a metal containing reservoir layer.

12. A memory structure comprising:
a first electrode;
a multi-layer nonvolatile electrochemical cell, wherein a center of the multi-layer nonvolatile electrochemical cell comprises a conductive core laterally surrounded by a programming gate, wherein the conductive core is in contact with the first electrode, and wherein programming gate is laterally surrounded by a channel; and
a second electrode is in contact with the channel,
wherein read and write operations pass between the first electrode and the second electrode through the multi-layer nonvolatile electrochemical cell, and wherein a path of the read operation and a path of the write operation are different.

13. The structure of claim 12 , wherein the multi-layer nonvolatile electrochemical cell includes an ion exchange layer.

14. The structure of claim 13 , wherein a material of the ion exchange layer comprises a metal oxide.

15. The structure of claim 14 , wherein the oxide is selected from a group consisting of: HfOx and TaOx.

16. The structure of claim 12 , wherein the first electrode is in contact with the channel.

17. The structure of claim 12 , wherein a material for the channel is selected from a group consisting of: WOx, TiOx, VOx, TaOx.

18. The structure of claim 12 , wherein the first electrode is in contact with the channel and the conductive core.

Assignees

• IBM

Inventors

• Rozen John

Classifications

• G11C13/004

  Reading or sensing circuits or methods · CPC title

• H01L45/1253 Primary

  Electricity · mapped topic

• H01L45/146

  Electricity · mapped topic

• H01L27/2481

  Electricity · mapped topic

• G11C13/0007

  comprising metal oxide memory material, e.g. perovskites · CPC title