Semiconductor structure and related methods
US-12588283-B2 · Mar 24, 2026 · US
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Lee Wei-Yang patents
Lee Wei-Yang is listed as an inventor on 484 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Lee Wei-Yang |
| Total patents | 484 |
| First publication | Feb 10, 2015 |
| Latest publication | Mar 24, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Methods of manufacturing semiconductor devices and semiconductor devices
US-12581691-B2 · Mar 17, 2026 · US
Backside source/drain contacts and methods of forming the same
US-12568648-B2 · Mar 3, 2026 · US
Gate-all-around transistor having inner space lined by a semiconductor liner and method of forming the same
US-12543361-B2 · Feb 3, 2026 · US
Method of forming a gap under a source/drain feature of a multi-gate device
US-12538532-B2 · Jan 27, 2026 · US
Epitaxial features in semiconductor devices and method of manufacturing
US-12532532-B2 · Jan 20, 2026 · US
Semiconductor devices with enhanced carrier mobility
US-12527039-B2 · Jan 13, 2026 · US
Selective gate air spacer formation
US-12520560-B2 · Jan 6, 2026 · US
Semiconductor devices with modified source/drain feature and methods thereof
US-12520526-B2 · Jan 6, 2026 · US
Inner spacer for a multi-gate device and related methods
US-12520555-B2 · Jan 6, 2026 · US
Recent patents
Latest publications not already listed above.
Gate-all-around devices
US-2026006811-A1 · Jan 1, 2026 · US
Semiconductor device
US-12507446-B2 · Dec 23, 2025 · US
Method for forming different types of devices
US-12501601-B2 · Dec 16, 2025 · US
Semiconductor device structure and methods of forming the same
US-2025374634-A1 · Dec 4, 2025 · US
Structure and formation method of semiconductor device with semiconductor nanostructures
US-2025374632-A1 · Dec 4, 2025 · US
Semiconductor device with epitaxial bridge feature and methods of forming the same
US-2025366032-A1 · Nov 27, 2025 · US
Semiconductor device active region profile and method of forming the same
US-2025366012-A1 · Nov 27, 2025 · US
Gate-all-around devices and methods for manufacturing same
US-2025366042-A1 · Nov 27, 2025 · US
Methods of manufacturing semiconductor devices and semiconductor devices
US-2025366063-A1 · Nov 27, 2025 · US
Epitaxial source/drain feature with enlarged lower section interfacing with backside via
US-2025359207-A1 · Nov 20, 2025 · US
Method of forming a gap under a source/drain feature of a multi-gate device
US-2025359212-A1 · Nov 20, 2025 · US
Semiconductor device structure with nanostructures
US-2025359193-A1 · Nov 20, 2025 · US
Source and Drain Engineering Process for Multigate Devices
US-2025359181-A1 · Nov 20, 2025 · US
Integrated circuit structure
US-2025359197-A1 · Nov 20, 2025 · US
Methods of manufacturing semiconductor devices and semiconductor devices
US-2025359165-A1 · Nov 20, 2025 · US
Gate-all-around devices
US-2025351549-A1 · Nov 13, 2025 · US
Inner spacers for multi-gate transistors and manufacturing method thereof
US-2025351512-A1 · Nov 13, 2025 · US
Transistor including bottom isolation and manufacturing method thereof
US-2025351449-A1 · Nov 13, 2025 · US
Semiconductor device active region profile and method of forming the same
US-12471306-B2 · Nov 11, 2025 · US
Semiconductor device with epitaxial bridge feature and methods of forming the same
US-12464769-B2 · Nov 4, 2025 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Taiwan Semiconductor Mfg Co Ltd | 489 |
| Taiwan Semiconductor Mfg | 10 |
| Lee Wei-Yang | 2 |
| Lee Da-Yuan | 2 |
| Hsu Kuang-Yuan | 2 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D64/017 | 354 |
| H10D62/151 | 318 |
| H10D30/797 | 317 |
| H10D84/038 | 309 |
| H10D62/822 | 301 |